Allicdata Part #: | DCX100NSDITR-ND |
Manufacturer Part#: |
DCX100NS-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN/PNP PREBIAS SOT563 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | DCX100NS-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V / 33 @ 5mA, 5V |
Base Part Number: | DCX100 |
Supplier Device Package: | SOT-563 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 10 kOhms, 1 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 50mA, 100mA |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DCX100NS-7 is a pre-biased array of bipolar junction transistors. It is designed to provide reliable operation and performance across a wide range of electronic applications. The device is a combination of two individual die, each being a pre-biased NPN and PNP transistor.The NPN transistor features a collector terminal for the collector-emitter junction, an emitter terminal for the base-emitter junction and a base terminal for the base-emitter junction. The PNP transistor features a collector terminal for the collector-emitter junction, a base terminal for the base-emitter junction, and an emitter terminal for the collector-base junction.The DCX100NS-7 is designed to provide a simple, low-cost solution for various products with limited space. It is especially useful for applications that require parallel operation of multiple transistors in an array configuration to reduce space and cost. This device can operate with a wide range of base and emitter currents and also provides flexibility in current gain and saturation voltage.The DCX100NS-7 can operate in either active or cutoff mode. In active mode, the base current activates the transistor and the current gain, determined by the collector current, is limited depending on the base current. In cutoff mode, the collector is shorted to the base and no current is flowing.The DCX100NS-7 is also designed to work with a wide range of collector-emitter voltage. It is typically used at voltages ranging from less than 4 volts to more than 70 volts. It is capable of operating with both dc and ac signals and has good temperature stability.The DCX100NS-7 exhibits excellent switching characteristics and delivers low pulse distortion. It is also characterized by low thermal resistance and high frequency response. The device is suitable for use in high-frequency radio, automotive electronics, and data communications systems.The DCX100NS-7 provides excellent reliability and durability. It is also resistant to thermal shock, vibration, and is highly resistant to radiation damage. It can operate over a wide temperature range from -55°C to +150°C.The DCX100NS-7 is available in a range of packages and pin configurations. It is ideal for use in circuits that require high levels of isolation and high withstand voltage. The device is also compliant with the RoHS directive and is suitable for lead-free soldering.In summary, the DCX100NS-7 is a pre-biased array of bipolar junction transistors designed for reliable operation across a wide range of electronic applications. It features excellent switching characteristics, low thermal resistance and high frequency response, excellent reliability and durability, and is resistant to thermal shock and vibration. The device is suited for a range of products and can provide an effective solution to those applications that require limited space and cost.
The specific data is subject to PDF, and the above content is for reference
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