DCX143ZU-13R-F

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Transistors are essential components of today\'s electronic circuits. In particular, bipolar transistors (BJT) are designed to provide high-speed, precise and reliable switching, as well as excellent current gain and power gain. The DCX143ZU-13R-F is a member of the pre-biased array of bipolar transistors from DCX. This device is designed to provide innovative, precise and reliable switching capabilities for use in a variety of applications.

The DCX143ZU-13R-F is an array of two different transistors, each with its own built-in bias, offering the advantage of a single device occupying two separate positions on the circuit board. The first transistor has an NPN type while the second is PNP type. The NPN device has a maximum current rating of 80 mA while the PNP transistor has a current rating of 100 mA. This device has a maximum DC power dissipation of 125 mW and features an MTBF (Mean Time Between Failures) of more than 1,000,000 hours. It also has a maximum operating temperature of +125°C.

The DCX143ZU-13R-F is ideal for a wide range of applications, including motor control, high-speed switching, and communication. Its excellent current gain and power gain provide superior power management, enabling it to be used in a variety of power applications. Its small size and low power consumption make it ideal for portable devices and other applications where space is limited.

The DCX143ZU-13R-F array provides reliable, precise and fast switching. It features a low forward voltage and low reverse leakage current allowing it to operate over a wide temperature range. In addition, its low OFF-state leakage current makes it suitable for low power and low voltage applications. The device is also pin compatible with standard logic families and is fully compatible with a variety of popular logic technologies.

The working principle of the DCX143ZU-13R-F is similar to that of a standard bipolar transistor in that it uses an NPN and PNP transistor array to provide reliable switching. In this case, the NPN transistor is biased using a base current source, while the PNP transistor is biased using a collector current source. The base-to-collector voltage of the NPN transistor is controlled by a voltage generator, while the collector current of the PNP transistor is also controlled by a voltage generator. When the base-to-collector voltage of the NPN transistor goes above a certain threshold, known as the cut-off voltage, the device is switched off. The amount of current allowed to pass through the NPN transistor is then limited by the value of the collector current source.

In summary, the DCX143ZU-13R-F is a high-speed, reliable and precise pre-biased array of Bipolar Transistors (BJT). With its excellent current gain and power gain, it is suitable for a wide range of applications, including motor control, high-speed switching, and communication. The device has a low forward voltage and low reverse leakage current, allowing it to operate over a wide temperature range, and it is also pin compatible with standard logic families. Its working principle is based on two transistors, each with their own built-in bias. The amount of current allowed to pass through the NPN transistor is then limited by the value of the collector current source.

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