DCX122LH-7

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DCX122LH-7 is a pre-biased array of bipolar junction transistors (BJT) for use as a driver in applications such as automotive systems and telecommunication equipment. This device contains seven high-voltage NPN transistors with high performance in a plastic surface mount package. The device has excellent electrical characteristics over a wide range of temperatures, making it suitable for a wide variety of applications.

Application Field

DCX122LH-7 can be used in automotive systems, telecommunication equipment, audio amplifiers, power control circuits, and other high power requirements. It is well suited for applications needing high voltage and high current handling capabilities due to its high breakdown voltage and current gain. The device also has low saturation voltage, which makes it suitable for switching applications. In addition, the device\'s low thermal resistance allows for a high continuous current of up to 6 A.

Working Principle

The working principle of the DCX122LH-7 pre-biased array of bipolar junction transistors (BJT) for use as a driver operates on the principles of collector-emitter voltage, current gain and saturation voltage. The device has seven NPN transistors which are formed by loading the base-emitter junction (BEJ) with sufficient current and thereby forming an n-type material with a continuous flow of holes through the base area. This creates a phenomenon called forward bias. Since the BEJ is forward biased, the collector-emitter voltage (Vce) rises causing the device to enter active region of operation, allowing it to drive current through the collector load.

When a sufficient amount of current is loaded into the base-emitter junction (BEJ), the collector-emitter voltage (Vce) will plateau and the device will remain in the active region of operation, allowing it to drive current through the collector load. The amount of current loaded into the BEJ determines the device\'s current gain, which is the ratio of the output current over the input current. The base-emitter voltage (Vbe) also determines the device\'s saturation voltage, which is the minimum difference between the base and collector voltage for the device to remain in the active region of operation.

The DCX122LH-7 pre-biased array of bipolar junction transistors (BJT) is designed to handle current loads up to 6 A, making it ideal for applications needing high voltage and high current. The device also features a low saturation voltage, allowing it to remain in the active region of operation even when lower current loads are applied. The device is suited for a wide range of applications, such as automotive systems, telecommunication equipment, power control circuits, and audio amplifiers.

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