Allicdata Part #: | DCX114YK-7-F-ND |
Manufacturer Part#: |
DCX114YK-7-F |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN/PNP PREBIAS 0.3W SC74R |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | DCX114YK-7-F Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05489 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 10mA, 5V |
Base Part Number: | DCX114 |
Supplier Device Package: | SC-74R |
Package / Case: | SC-74, SOT-457 |
Mounting Type: | Surface Mount |
Power - Max: | 300mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DCX114YK-7-F is a seven transistor chip pre-biased Bipolar Junction Transistor (BJT) array from Intersil. The chip has part of its circuitry biased at the factory and raised to the optimal operating level for BJT operation. The chip consists of seven NPN transistors with a common emitter and is designed for amplifying and switching applications.
Application Field
The intended application field of the DCX114YK-7-F includes signal amplifying and switching. It has optimized performance characteristics making it ideal for signal processing applications such as signal signal conditioning and transimpedance amplifiers from audio frequencies up into the GHz range. Additionally, the chip can be used in analog signal and control signal processing designs for power amplifier stages, voltage-controlled oscillators, low noise amplifiers, and current mirrors.
Working Principle
The DCX114YK-7-F provides seven NPN transistors that are pre-biased for the active collector region. The chip is supplied in an 8-pin DIP package, and each transistor has its own collector, base, and emitter pins. Due to the pre-biased nature of the device, the base voltage is pre-set allowing the transistors to remain ready to use, while the collector emitter voltage headroom is also predetermined. The chip is designed to be operated at high frequency as it provides a low distortion signal, making it suitable for signal amplifying and switching.
In terms of operation, the DCX114YK-7-F must be supplied with a voltage level of 5 to 6.5V. The collector current is mainly determined by the gain ratio of the transistor, but can be vastly reduced by applying a voltage to the base terminal. Similarly, the collector voltage can be manipulated by changing the base current. The transistors are designed to be operational over a wide temperature range from -55°C to 200°C and can also be operated at high frequencies, with a typical upper frequency limit being 200 MHz.
In terms of protection systems, the chip employs a collector-emitter short-circuit protection and electrostatic protection. While it does not provide internal protection for over-voltage, it does incorporate a thermal shutdown mechanism which assists with controlling any thermal stress that might be applied to the chip.
Because the DCX114YK-7-F is a pre-biased device, it provides an efficient and cost-effective solution for a wide range of signal processing applications.
In summation, the DCX114YK-7-F is a pre-biased Bipolar Junction Transistor (BJT) array from Intersil. Designed for amplifying and switching applications, it is ideal for signal processing designs such as signal conditioners, transimpedance amplifiers, and current mirrors. The chip provides seven NPN transistors in an 8-pin DIP package, with an operating voltage level of 5-6.5V. It employs collector-emitter short-circuit protection, electrostatic protection, and thermal shutdown protection.
The specific data is subject to PDF, and the above content is for reference
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