Allicdata Part #: | DCX124EUDITR-ND |
Manufacturer Part#: |
DCX124EU-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN/PNP PREBIAS SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | DCX124EU-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Base Part Number: | DCX124 |
Supplier Device Package: | SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 22 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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DCX124EU-7 is a bipolar junction transistor array composed of seven NPN transistors pre-biased in an SOT23 package. It is designed for use in small-signal, power electronics and telecom applications such as for amplifying radio signals, in telecommunications applications and in small-signal logic circuits. It is also used in power management and control applications. The seven transistors arranged in the array are pre-biased to provide protection to the transistors from static damage.
The DCX124EU-7 is composed of seven NPN transistors, which are arranged in a multi-gate structure. Each transistor has two collectors and one emitter. The collectors are connected to each other and form the drain of the array, while the emitter is shared among the transistors. This allows the array to operate in two distinct regions: the linear region and the switch region.
In the linear region, the transistors act as amplifiers, meaning that a small change in the base-emitter voltage results in a large change in the current flow through the array. This is due to the transistors being pre-biased. This allows the transistors to be more efficient at amplifying small signals. As the current through the array increases, the transistors enter the switch region, which is characterized by a much lower gain and a much higher voltage drop across the array.
The DCX124EU-7 has a working frequency range from 10kHz to 50MHz. It has a maximum collector-emitter voltage of 20V, a maximum collector current of 1A and a maximum collector-base voltage of 30V. It also has a maximum collector-emitter saturation voltage of 0.2V and a thermal resistance of 75°C/W.
The DCX124EU-7 has a number of advantages when compared to traditional bipolar junction transistors. The pre-biased structure helps to reduce noise levels and the lower saturation voltage helps to reduce power consumption. The high frequency range also makes it suitable for a variety of applications, including high speed switching and power management circuits.
The DCX124EU-7 is an ideal choice for a variety of applications. Its linear and switch regions make it suitable for use as an amplifier in radio and telecommunications applications, and its pre-biased structure and low noise levels make it a good choice for small-signal logic circuits. Its high frequency range and power management capabilities make it suitable for use in power management and control circuits.
The specific data is subject to PDF, and the above content is for reference
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