DCX123JH-7 Allicdata Electronics
Allicdata Part #:

DCX123JH-7-ND

Manufacturer Part#:

DCX123JH-7

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN/PNP SOT563
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: DCX123JH-7 datasheetDCX123JH-7 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.06861
Stock 1000Can Ship Immediately
$ 0.08
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Base Part Number: DCX123
Supplier Device Package: SOT-563
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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DCX123JH-7 is an array of pre-biased bipolar junction transistors (BJTs) developed by X Corporation aimed at a variety of industrial and automotive applications. It features high gain and excellent linearity, plus fast switching times. The pre-biased BJT array provides an efficient and reliable system for controlling power distribution or switching loads at high speed. The device is offered in a range of packages and supported by a range of specialty software tools.

The architecture of the DCX123JH-7 array consists of three bipolar transistors connected in a series. This structure provides better power handling capabilities compared to a single BJT, with each transistor individually biased and matched. Furthermore, the array’s output voltage is proportional to the collector-emitter voltage of the transistors, which ensures linearity and accurate switching.

The DCX123JH-7 array works by applying a voltage to the base of each transistor in the array. This voltage must be higher than the reverse biased base-emitter junction; hence, the array is pre-biased. With the current flowing through the base region of each transistor, the collector-emitter voltage is increased. This increase collapses the reverse bias of the collector-emitter junction and current flows between collector and emitter. As the current increases, the collector-emitter voltage further increases, resulting in higher-gain, better linearity and higher accuracy.

DCX123JH-7 arrays can be used in a variety of industrial and automotive applications that require high-speed switching and/or power distribution. They are used in a wide range of automotive systems such as airbag control, engine management and brakes, as well as in home and office appliances, telecom equipment and consumer electronics. The pre-biased BJT array also finds its use in power supplies, sensors, microcontrollers and other embedded applications.

By harnessing the performance of pre-biased BJT arrays, the DCX123JH-7 is an ideal choice for industrial and automotive applications that require fast and accurate switching or power distribution. With its high gain, excellent linearity and fast switching times, it is designed to make your system more reliable and efficient. This pre-biased BJT array is robust, highly efficient and offers superior performance. It is also supported by a range of specialty software tools to make installation and use as easy and effortless as possible.

The specific data is subject to PDF, and the above content is for reference

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