Allicdata Part #: | DDC114TUDITR-ND |
Manufacturer Part#: |
DDC114TU-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS 2NPN PREBIAS 0.2W SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | DDC114TU-7 Datasheet/PDF |
Quantity: | 1000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Base Part Number: | DDC114 |
Supplier Device Package: | SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | -- |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 100µA, 1mA |
Series: | -- |
Resistor - Emitter Base (R2): | -- |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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The DDC114TU-7 is a Bi-polar Junction Transistor (BJT) array that has been pre-biased. The grouping allows rapid integration into Designs, allowing Engineers to quickly build into their application circuit with ease. The two devices housed in a SOT-563 outline each contain two transistors in its design, acting together as a single unit.
In its pre-biased arrangement, the gate of the devices are held high and the emitter of each device is held low. This allows the application circuit to connect to the common input with one connection instead of three for a normal BJT. This configuration saves time and material in the design of the extended circuit.
Being an array package, the DDC114TU-7 allows for multiple transconductance gains in one package. This provides Engineers with the ability to use a much larger signal gain than with a single BJT as the signal is multiplied by the number of transistors within. This amplification of the signal is fundamental to circuit design, such as amplifiers and filters.
It is an NPN BJT Array that is useful in applications where signal gain is needed to be increased, such as RF stages. The input signal is increased by the total gain in the output of each transistor, and is capable of driving MOSFETs directly. The maximum collector voltage of the each transistor lies at 65Vdc, and is optimized to run at a Collector-Emittor Voltage of 45Vdc.
The operating temperature of the device lies between -55°C to +150°C. The power dissipation of this device is 0.25W(max). As a general BJT package, the DDC114TU-7 has the capacity to handle large power inputs without any noticeable losses in its input signal. As the signal passes through the array, each transistor spreads out the current which ensures that no transistor will be overloaded by the power up to the maximum rating of the package.
The gain range of this device is excellent and can be tailored to operate in the region of 25 to 200.The current gain per transistor of the BJT array ranges from 25-300 minimum and varies with the applied collector-emitter voltage which allows the user to adjust the gain to suit the application.
The DDC114TU-7 is also extremely fast-switching, responding to input changes in hundredths of milliseconds with no latency. This makes the device ideal for applications such as switching and amplifying for high speed digital signals. As the array is able to respond to fast signals, it is perfect for applications involving dual-port transmission buffers and logic gates.
To conclude, the DDC114TU-7 is a pre-biased Bi-polar Junction Transistor Array that has excellent gain range and is capable of switching extremely fast signals. It is suitable for a range of applications as it combines multiple transistors into one to form a single unit, allowing rapid integration into applications. Moreover, the maximum operating temperature is 1,650°C, making it an ideal choice for use in a wide variety of industries.
The specific data is subject to PDF, and the above content is for reference
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