DDC144TU-7 Discrete Semiconductor Products

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The DDC144TU-7 is a pre-biased, array of bipolar junction transistors (BJTs) designed for various applications. It has four pins, including the collector, base, and emitter (CBE). The DDC144TU-7 is a small bodied transistor array deployed for general purpose, linear amplification and switching applications. It can be used in battery powered consumer products like portable radios, portable calculators, alarm systems and datalogging.

The DDC144TU-7 is designed to operate in a wide range of temperatures, from -55⁰C to +125⁰C, and at supply voltages ranging from 2.7V to 30V. It is typically constructed using a low saturation voltage technology, and provides low minimum base-emitter voltage drops. This allows for higher current passage with less-saturated base emitter drops, providing a high level of functionality in tight, low power operating conditions.

The working principle of the DDC144TU-7 transistor array may best be broken down into two separate components: current gain and transfer characteristics. In terms of current gain, it relies on the amplifying action of PNP junctions in the base-collector region. In other words, movement of electrons from the emitter to the base is amplified by means of holes passing from the collector to the base. The resulting effect is an output current that is larger than the input current.

In terms of transfer characteristics, the DDC144TU-7 operates in three separate regions: saturation, activation, and cut-off. During saturation, both base-emitter and base-collector junctions are forward biased and both carriers have some degree of forward motion. This results in a high gain amplification of the input current. During activation, the base-collector junction is turned off (reverse biased) while the base-emitter junction is forward biased and both electrons and holes are still capable of experiencing some forward movement. Lastly, during cut-off, both of the j

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