Allicdata Part #: | DDC124EU-FDITR-ND |
Manufacturer Part#: |
DDC124EU-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS 2NPN PREBIAS 0.2W SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | DDC124EU-7-F Datasheet/PDF |
Quantity: | 6000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
Base Part Number: | DDC124 |
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A DDC124EU-7-F can be categorized as a transistor with a bipolar junction array, or BJT, and pre-biased elements, meaning that the base-to collector bias voltage can be established prior to usage. This type of transistor array also has limited electrical characteristics, with a continuous collector current of 2mA and a power dissipation ratings of about 250mW per transistor. It is also capable of functioning up to a frequency of 1KHz and has a breakdown voltage of 1.6V.
The applications that this type of transistor can be used for include the customary applications involving digital electronics and signal processing, as well as voltage control in some systems, such as air conditioners and refrigerators. Many microcontroller systems are also compatible with this type of transistor array, allowing it to be used as an interface between the peripheral device and microcontroller. It is also small and compact, making it easy to fit into circuits.
The working principle of the DDC124EU-7-F is fairly straightforward. When a current is passed from the base (BE) to the collector (CE), it creates a base current which, when reaching a certain intensity, will force the BE-CE junction to break down and release a heavily amplified current from the collector which is suitable for further processing in circuits. The voltage control and breakdown voltage threshold determine the maximum voltag
The specific data is subject to PDF, and the above content is for reference
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