DDC124EU-7-F Allicdata Electronics
Allicdata Part #:

DDC124EU-FDITR-ND

Manufacturer Part#:

DDC124EU-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS 2NPN PREBIAS 0.2W SOT363
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: DDC124EU-7-F datasheetDDC124EU-7-F Datasheet/PDF
Quantity: 6000
Stock 6000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Base Part Number: DDC124
Description

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A DDC124EU-7-F can be categorized as a transistor with a bipolar junction array, or BJT, and pre-biased elements, meaning that the base-to collector bias voltage can be established prior to usage. This type of transistor array also has limited electrical characteristics, with a continuous collector current of 2mA and a power dissipation ratings of about 250mW per transistor. It is also capable of functioning up to a frequency of 1KHz and has a breakdown voltage of 1.6V.

The applications that this type of transistor can be used for include the customary applications involving digital electronics and signal processing, as well as voltage control in some systems, such as air conditioners and refrigerators. Many microcontroller systems are also compatible with this type of transistor array, allowing it to be used as an interface between the peripheral device and microcontroller. It is also small and compact, making it easy to fit into circuits.

The working principle of the DDC124EU-7-F is fairly straightforward. When a current is passed from the base (BE) to the collector (CE), it creates a base current which, when reaching a certain intensity, will force the BE-CE junction to break down and release a heavily amplified current from the collector which is suitable for further processing in circuits. The voltage control and breakdown voltage threshold determine the maximum voltag

The specific data is subject to PDF, and the above content is for reference

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