DDTA113TUA-7-F Discrete Semiconductor Products |
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Allicdata Part #: | DDTA113TUA-FDITR-ND |
Manufacturer Part#: |
DDTA113TUA-7-F |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS PNP 200MW SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DDTA113TUA-7-F Datasheet/PDF |
Quantity: | 30000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.02869 |
6000 +: | $ 0.02495 |
15000 +: | $ 0.02121 |
30000 +: | $ 0.01996 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Base Part Number: | DDTA113 |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Series: | -- |
Resistor - Base (R1): | 1 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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Bipolar Junction Transistor (BJT) is a type of transistor that uses both electrons and holes as charge carriers. It consists of three leads, namely the base, collector and emitter. The DDTA113TUA-7-F is a type of single, pre-biased BJT device, a special kind of BJT device that has its base-emitter junction pre-biased to reduce device noise.
The DDTA113TUA-7-F device features high-gain, low-power consumption, and a high voltage tolerance. It is constructed using a thinly diffused NPN silicon bipolar transistor that is manufactured using high-temperature polysilicon (HTPS) process, which allows the device to maintain a high frequency operation. Additionally, its collector current is rated at a maximum of 100mА and its collector-emitter breakdown voltage is rated at 60V, making it an excellent solution for low-noise, high-output applications.
The DDTA113TUA-7-F operates by first biasing the base-emitter junction which creates the breakdown voltage. This breakdown voltage allows current to flow between the base and emitter. The current flowing between the base and emitter is then used to control the current flowing between the collector and emitter. In this way, the DDTA113TUA-7-F device works as a current amplifier, allowing a small current input to control a much larger current output.
The DDTA113TUA-7-F single, pre-biased BJT device is primarily used in electrical circuits that require low noise and high output. Common uses of the device include amplifier and oscillator applications such as amplifiers used in audio or RF circuits, or oscillators used in frequency synthesis. The device is also used in switching circuits, as it provides low on-state resistance and high off-state resistance. It is also used in digital circuits, such as logic gates and for triggering other switching devices.
In conclusion, the DDTA113TUA-7-F single, pre-biased BJT device is an excellent solution for applications that require low noise and high output. Its low power consumption and high voltage tolerance make it suitable for many amplifier and oscillator applications, as well as digital circuits and switching circuits. It is a highly reliable device that is easy to use, making it an ideal choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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