DDTA123JUA-7 Allicdata Electronics
Allicdata Part #:

DDTA123JUADITR-ND

Manufacturer Part#:

DDTA123JUA-7

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS PNP 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DDTA123JUA-7 datasheetDDTA123JUA-7 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
30000 +: $ 0.04823
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Resistor - Emitter Base (R2): 47 kOhms
Base Part Number: DDTA123
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Series: --
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Discontinued at Digi-Key
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Introduction

Transistors are electronic components used to control current or voltage in order to perform a specific function. The operation of transistors is based on the basic principles of semiconductor physics. One common type of transistor is the single, pre-biased, bipolar junction transistor (BJT) commonly known as a DDTA123JUA-7 (also referred to as a “prebiased BJT”). This type of transistor is frequently used in a wide range of devices from low-voltage, low-power applications to high-voltage, high-power applications.

DDTA123JUA-7 Application Field and Working Principle

The DDTA123JUA-7 is used primarily in applications requiring high-voltage, large-current conditions. It may be employed to provide switching, amplification, and/or level adjustment functions, depending on the configuration of the transistor. Transistor fabrication and design must account for the operating conditions, primarily the voltages and currents that the transistor will be exposed to.When operating at low voltage, the DDTA123JUA-7 has two regions of adjustable voltage called the base-emitter and collector-base junctions. These form what is known as a potential barrier. When current passes through the base-emitter junction, it is cut off by the collector-base junction, creating a two-layer shield. This two-layer shield is used to regulate current flow through the transistor, and it can be adjusted to change its resistance.When operating at higher voltage, the DDTA123JUA-7 works differently. In this application, the base-emitter and collector-base junctions are connected in parallel, creating what is known as a diode bridge. This diode bridge allows current to flow freely as long as it is within a certain voltage range. When the voltage exceeds the set range, the current will be blocked and the transistor will switch off.The DDTA123JUA-7 is typically constructed using NPN (negative-negative-positive) type semiconductors. The base-emitter junction is between the positive and negative regions, while the collector-base junction is between the base and the collector. The base-emitter junction allows current to flow freely when a positive voltage is applied to it, and it switches off when the voltage exceeds a certain value. The collector-base junction works in the same way, and it acts as a gate controlling the voltage and current in the circuit.

Advantages and Operation Considerations

The DDTA123JUA-7 offers several advantages when compared to other types of transistors. Its pre-biased construction makes it suitable for applications requiring high-voltage and large-current conditions, and its two-layer shield provides excellent protection against overvoltage and high-frequency noise. Additionally, the two-layer shield also regulates current to prevent it from exceeding the transistor\'s maximum current rating. When operating the DDTA123JUA-7, it is important to ensure that the supplied voltage is within the set range. Operating outside of the set voltage range can cause the transistor to fail prematurely and result in costly repairs. Additionally, excessive heat or vibrations may also have an adverse effect on the performance of the transistor. Care should be taken to avoid exposing the transistor to environmental conditions that can cause it to malfunction.

Conclusion

The DDTA123JUA-7 is a single, pre-biased, bipolar junction transistor commonly used in applications requiring high-voltage and large-current conditions. Its pre-biased construction provides excellent protection against overvoltage and high-frequency noise, and it can be easily adjusted to change its resistance. When operated outside of the set voltage range, the DDTA123JUA can fail prematurely, resulting in costly repairs, and it should be protected against excessive heat and vibrations. With proper application and use, the DDTA123JUA-7 can provide excellent performance and long-lasting operation.

The specific data is subject to PDF, and the above content is for reference

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