DDTA144GE-7-F Allicdata Electronics
Allicdata Part #:

DDTA144GE-FDITR-ND

Manufacturer Part#:

DDTA144GE-7-F

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS PNP 150MW SOT523
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DDTA144GE-7-F datasheetDDTA144GE-7-F Datasheet/PDF
Quantity: 6000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.03985
6000 +: $ 0.03465
Stock 6000Can Ship Immediately
$ 0.04
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Base Part Number: DDTA144
Supplier Device Package: SOT-523
Package / Case: SOT-523
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DDTA144GE-7-F transistor is part of a range of single, pre-biased transistors manufactured by Continental Device India Limited. These devices are general-purpose bipolar junction transistors (BJT) meaning they are used in a wide variety of applications requiring amplification, switching and other operations. The device comes in a TO-92 package and is rated at 250mW of power. In terms of electrical characteristics, the device has a collector current of 40mA, a voltage gain of 20 to 250, and a collector-emitter breakdown voltage of 28V.

As a single, pre-biased transistor, the DDTA144GE-7-F is designed for use in an already setup circuit, so the process for setting up the transistor is much simpler than with typical BJTs. This type of transistor has an internal bias resistor that allows the device to be reliably established with lower input power. In this way, the DDTA144GE-7-F is suitable for applications that would normally require several stages of transistors, or circuits that require small current switching and loads.

The DDTA144GE-7-F can be used in a basic two-transistor amplifier circuit where the collector of a first transistor is connected to the base of a second transistor (as a negative feedback loop). This circuit can be used in DC or AC amplifiers or even in inverters. The device can also be used in switching applications, as a voltage drop device, or as a low power amplifier in telephone amplifiers and receivers.

In terms of its working principle, the DDTA144GE-7-F comprises of three main junctions; base-collector, base-emitter, and collector-emitter. In operation, a signal is applied to the base. This then allows current to flow through the base-collector junction. This current creates a voltage drop across the collector-emitter junction allowing current to flow through the collector as well. This current flow then generates a larger current through the load connected to the collector. The device can be used as an amplifier, as well as a switch, and the voltage gain, current amplification, and frequency response of the device come from the ratio of the resistance in the circuit.

The DDTA144GE-7-F is a versatile, pre-biased device that is suitable for a wide range of applications requiring amplification, switching and other operations. The device is reliable and easy to use, eliminating the need for multiple transistors and other circuits for lower current switching and loads. Its simplicity and wide range of operating characteristics make it well suited for a number of applications.

The specific data is subject to PDF, and the above content is for reference

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