DDTA113ZE-7-F Allicdata Electronics
Allicdata Part #:

DDTA113ZE-7-F-ND

Manufacturer Part#:

DDTA113ZE-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS PNP 150MW SOT523
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DDTA113ZE-7-F datasheetDDTA113ZE-7-F Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Base Part Number: DDTA113
Supplier Device Package: SOT-523
Package / Case: SOT-523
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DDTA113ZE-7-F is a single, pre-biased Bipolar Transistor (BJT). It features a low noise and very high gain, making it suitable for use in radio frequency (RF) amplifier circuits. In addition, it has a low voltage drop and is capable of operating at very high temperatures. Because of its unique characteristics, the DDTA113ZE-7-F is found in a variety of applications, from analog signal processing to consumer audio and automotive systems.

The DDTA113ZE-7-F has two main components, a base and a collector. The base is designed to accept the incoming signal and pass it along to the collector. The collector controls the amount of current flowing through the circuit by varying the voltage applied to it. This voltage is called the collector-emitter voltage (Vce). The collector-emitter voltage helps to determine the gain of the amplifier and its frequency response.

The transistors used in the DDTA113ZE-7-F have a very wide frequency range, from DC up to 1 GHz. This makes them suitable for use in a variety of applications from radio-frequency signal processing to consumer audio systems. It is also capable of amplifying low-level signals up to a certain level.

The DDTA113ZE-7-F works on a common-base configuration. This means that the base is shared by both the emitter and the collector. A voltage applied to the base will cause current to flow through the transistor. This current is then amplified and passed on to the collector. The collector-emitter voltage will determine the gain and frequency response of the amplifier.

The DDTA113ZE-7-F can be used in a variety of applications. It is particularly suitable for use in radio-frequency signal processing, as it has a wide frequency range and low-noise characteristics. It is also well-suited for use in consumer audio systems, as it can provide good sound quality and accurate reproduction of source signals. It can also be used in automotive systems for signal processing and amplifier applications.

In summary, the DDTA113ZE-7-F is a pre-biased transistor with a wide frequency range of DC to 1 GHz. It is mainly used in radio-frequency signal processing, consumer audio systems, and automotive systems. The gain and frequency response of the amplifier can be adjusted by varying the collector-emitter voltage. Its low-noise characteristics make it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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