DDTA113ZKA-7-F Allicdata Electronics
Allicdata Part #:

DDTA113ZKA-7-F-ND

Manufacturer Part#:

DDTA113ZKA-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS PNP 200MW SC59-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DDTA113ZKA-7-F datasheetDDTA113ZKA-7-F Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Base Part Number: DDTA113
Supplier Device Package: SC-59-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DDTA113ZKA-7-F is a single, pre-biased, bipolar transistor (BJT) component specifically designed for a wide range of application purposes. This component offers excellent performance, reliability and value-added features, making it one of the most popular components in the BJT family.

A bipolar transistor is a type of semiconductor component that consists of three or four layers of doped semiconductor material, separated by three or four junctions. When used as a switch, current passes through a base (controlled by a gate voltage), is amplified by a collector, and then passes through an emitter. This creates a current gain involving electrons that are “pulled” from the emitter by the collector and brought into the base.

The DDTA113ZKA-7-F offers excellent performance due to its pre-biased design. Pre-biasing is a technique that allows certain properties within an BJT to become electrically adjusted, allowing for greater current gain, lower operating temperature, and faster switching times. The DDTA113ZKA-7-F provides a lower operating temperature, increased current gain, and its higher switching speed makes it suitable for applications requiring short on/off times.

This pre-biased BJT is also designed to provide excellent reliability in challenging applications. Its high reliability ensures its performance will not be affected by extreme environmental conditions, such as metal corrosion, temperature changes, or compressive forces. In addition, it is capable of providing constant performance in long-term operations such as in industrial automation applications.

The DDTA113ZKA-7-F also includes extra value-added components. This includes a low saturation voltage, which enables the device to remain in an active state even when it is exposed to high voltages. Additionally, it also features an anti-Thermal runaway protection with a guarantee of high current-gain stability to prevent over-heating.

Overall, the DDTA113ZKA-7-F is a reliable, high-quality BJT pre-biased transistor designed for a wide range of applications. It provides excellent performance, reliability and value-added features, making it one of the most popular components in the BJT family.

The specific data is subject to PDF, and the above content is for reference

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