DDTA113ZUA-7 Discrete Semiconductor Products |
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Allicdata Part #: | DDTA113ZUADITR-ND |
Manufacturer Part#: |
DDTA113ZUA-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS PNP 200MW SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DDTA113ZUA-7 Datasheet/PDF |
Quantity: | 1000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 33 @ 10mA, 5V |
Base Part Number: | DDTA113 |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 1 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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The DDTA113ZUA-7 is a single bipolar junction transistor (BJT) pre-biased in a TO-220 package. It is designed for applications that require low current gain, cut-off frequency and temperature coefficient. It is well suited for high-speed switching and logic-level switching applications.
A BJT is a three-terminal semiconductor device which is composed of two PN-junctions. Two of the terminals are called emitter and collector and the third terminal, the base, is used to control the current flow between the emitter and the collector. In this case, the DDTA113ZUA-7 has a base-emitter voltage of 5V, a collector-emitter saturation voltage of 900mV, and a collector current of 500mA. For applications that require higher current gain, the collector-emitter voltage can be increased to 1.2V.
The pre-biased nature of the DDTA113ZUA-7 makes it ideal for applications that require less overall power consumption, since the base current is already set to a fixed level, which eliminates the need for an external bias resistor. The lower power consumption can result in more reliable operation and a longer operating life.
The working principle of the DDTA113ZUA-7 is relatively simple. When the base-emitter voltage is applied, electrons flow from the emitter to the base, creating a current flow. This current flow then causes the current gain and cutoff frequency of the device to increase. As the cutoff frequency increases, the device is able to switch faster and more efficiently, leading to improved performance. Additionally, the pre-biasing of the device allows the device to operate at a lower voltage, and thus the overall power consumption is decreased.
The DDTA113ZUA-7 is well suited for high frequency switching and logic-level switching applications. Its high current gain and temperature coefficient allow it to respond quickly and accurately to input signals. Additionally, the low input current requirements make it a good choice for applications that require minimal power consumption. Furthermore, the pre-biasing of the device eliminates the use of an external bias resistor, making the device easier to use and optimize for specific applications.
In conclusion, the DDTA113ZUA-7 is an excellent choice for applications that require low current gain, cut-off frequency and temperature coefficient. Its pre-biased functionality eliminates the need for an external bias resistor, making it easy to use and optimize for specific applications. The device is well suited for high-speed switching and logic-level switching applications, and its low input current requirements make it a good choice for applications that require minimal power consumption. Overall, the DDTA113ZUA-7 is a great choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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DDTA123JCA-7-F | Diodes Incor... | -- | 15000 | TRANS PREBIAS PNP 200MW S... |
DDTA123ECA-7-F | Diodes Incor... | -- | 3405 | TRANS PREBIAS PNP 200MW S... |
DDTA123TCA-7-F | Diodes Incor... | 0.03 $ | 3000 | TRANS PREBIAS PNP 200MW S... |
DDTA143XUA-7-F | Diodes Incor... | -- | 9000 | TRANS PREBIAS PNP 200MW S... |
DDTA124EUA-7-F | Diodes Incor... | -- | 3000 | TRANS PREBIAS PNP 200MW S... |
DDTA124XCA-7-F | Diodes Incor... | -- | 3000 | TRANS PREBIAS PNP 200MW S... |
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DDTA143XCA-7-F | Diodes Incor... | 0.03 $ | 3000 | TRANS PREBIAS PNP 200MW S... |
DDTA115TCA-7-F | Diodes Incor... | -- | 6000 | TRANS PREBIAS PNP 200MW S... |
DDTA113TUA-7-F | Diodes Incor... | 0.04 $ | 30000 | TRANS PREBIAS PNP 200MW S... |
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DDTA114WUA-7-F | Diodes Incor... | -- | 6000 | TRANS PREBIAS PNP 200MW S... |
DDTA142TU-7-F | Diodes Incor... | 0.04 $ | 6000 | TRANS PREBIAS PNP 200MW S... |
DDTA144GUA-7-F | Diodes Incor... | 0.04 $ | 6000 | TRANS PREBIAS PNP 200MW S... |
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DDTA114EUA-7 | Diodes Incor... | 0.0 $ | 1000 | TRANS PREBIAS PNP 200MW S... |
DDTA143XUA-7 | Diodes Incor... | 0.0 $ | 1000 | TRANS PREBIAS PNP 200MW S... |
DDTA115EUA-7 | Diodes Incor... | 0.0 $ | 1000 | TRANS PREBIAS PNP 200MW S... |
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