DDTA114GUA-7 Allicdata Electronics
Allicdata Part #:

DDTA114GUADITR-ND

Manufacturer Part#:

DDTA114GUA-7

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS PNP 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DDTA114GUA-7 datasheetDDTA114GUA-7 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
30000 +: $ 0.04823
Stock 1000Can Ship Immediately
$ 0.06
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Base Part Number: DDTA114
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Discontinued at Digi-Key
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DDTA114GUA-7 is a single pre-biased bipolar junction transistor (BJT). BJTs are commonly used in electronic circuits as a switch or for amplification as they are relatively easy to use, due to their simple interface between an input and output. The DDTA114GUA-7 is an NPN transistor which, when biased correctly, can be used to switch a signal on or off, allowing current to pass through. In order to understand the application field and working principle of the DDTA114GUA-7, one must understand the basic operation and features of bipolar transistors in general.

Bipolar transistors are three terminal electronic devices. Two of the terminals, known as the Emitter and Collector, are the «input» and «output» devices for the transistor. The third terminal, known as the Base, is the controlling terminal which modulates the current flow between the emitter and collector. The emitter is usually the output side of the transistor while the collector is the input side. This bipolar transistor relies on the input voltage applied to the base to control the current flow, by either allowing it to pass between the emitter and collector, or preventing it from passing.

The DDTA114GUA-7 is a single pre-biased NPN transistor, meaning it is constantly biased with a voltage on the base terminal. Its PNP complement is the DDTA114FUA-7. The biasing of the DDTA114GUA-7 is set to 2V with a minimum operating voltage of 2V and a maximum operating voltage of 30V. This transistor can handle a maximum power dissipation of 600mW, and has a hFE (Current Gain) of 115. This indicates the transistor is able to produce an output current 115 times greater than the input current. Additionally, the DDTA114GUA-7 has a Turn-On Time of 0.5μs, meaning that the time from when the transistor is turned on to when current begins flowing is 0.5μs.

The DDTA114GUA-7 is typically used in applications such as switch circuits, amplifier circuits, and voltage regulators. As a switch, this transistor would be set to a bias voltage and when the input goes below or above that voltage, the transistor would turn-on or off switching the output. As an amplifier, the transistor can be used to boost the voltage of the input signal so that the output would be proportional to the input voltage applied to the base. As a voltage regulator it can be used to control the current flowing through the circuit by reacting to changes in input voltage.

The basic operating principle of the DDTA114GUA-7 is that, when a voltage is applied to the base, current begins to flow from the emitter to the collector, resulting in a proportionally increased voltage at the collector. This increase in current is known as the current gain, and is dependent on the base voltage. If the voltage at the base is too low, the current gain will be too low, resulting in insufficient current flowing between the emitter and collector. Conversely, if the voltage at the base is too high, the current gain will be too high, resulting in excessive current flowing between the emitter and collector. Therefore, in order to maximize the current flow, the input voltage applied to the base terminal must exceed the required set voltage in order to reach the desired current gain.

When used correctly in appropriate applications, the DDTA114GUA-7 can effectively boost the input voltage in order to increase the current flow between the emitter and collector terminals. This current flow can then be used to switch on or off the output, amplify the input signal, or control the voltage within a circuit. As such, the DDTA114GUA-7 is a versatile and useful bipolar transistor for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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