DDTA114TUA-7

DDTA114TUA-7 Application Field and Working Principle

The DDTA114TUA-7 is an advanced pre-biased transistor. It\'s manufactured by Vishay and belongs to the Single, Pre-Biased, Bipolar Transistors (BJT) category.

It has two modes of operation for both linear and switching applications. Vishay has developed this device for use in electronic applications such as in audio amplifiers, motor synchronizstion, and for speed control systems. It\'s also typically used in medical and industrial equipment in order to enable low-power, low-temperature performance.

The maximum power dissipation of the DDTA114TUA-7 is 200 mW (maximum) at 25°C. Its operating temperature range is between -65°C and 150°C, while its storage temperature range is between -65°C and 150°C. The chip\'s case temperature should not exceed the maximum operating temperature.

The DDTA114TUA-7 features up to 8-volt breakdown voltage, low voltage operation, and low beta gain. The device is fully pre-biased and has multiple base input-output coupled protection circuits. It has low standby current, low thermal resistance, and factored power rating.

The maximum collector current of the DDTA114TUA-7 is 110mA. Its Collector-Emitter Saturation Voltage Vce (sat) is 1.4V (max). The device also has a labeled collector-emitter voltage Vceo which is 14V.

The DDTA114TUA-7 has a simple working principle. It has an NPN Bipolar transistor which has a single base, two output leads (Collector and Emitter) and an input lead (Base). An electrical current runs through the base to the collector, which in turn stimulates a current from the collector to the emitter. This current controls the amount of charge or current flowing through the emitter to create a certain desired effect in the connected circuit. The amount of current which flows through the transistor is determined by the resistance between the base and the collector.

In terms of its structure, the DDTA114TUA-7 is fabricated using high-speed, high reliability complementary MOS transistors. It has a small chip size of 350 mils x 300 mils, allowing for easier mounting and superior device utilization. The case is molded using an epoxy compound that offers superior heat dissipation and reliability.

The DDTA114TUA-7 is a great choice for a wide range of applications. It offers a low voltage operation and low beta gain. Its thermal resistance is minimal, and its maximum power dissipation is 200 mW (maximum) at 25°C. The labeled collector-emitter voltage Vceo is 14V, while its Collector-Emitter Saturation Voltage Vce (sat) is 1.4V (max).