DDTA115GUA-7

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The DDTA115GUA-7 is a single, pre-biased, Bipolar Junction Transistor (BJT) device. The DDTA115GUA-7 offers high-current switching, high breakdown voltage, and low saturation voltage. It is specifically designed for a wide range of high frequency, high voltage, and high current applications. The DDTA115GUA-7 is suitable for consumer and industrial products that require robust and reliable performance.

A Bipolar Junction Transistor is a type of transistor that utilizes a base, a collector and an emitter. The base is the active region of the transistor, and it controls the flow of current between the collector and the emitter. The collector and the emitter are the two sides of the transistor, and their terminals are usually connected directly to the electrical circuit. In a single, pre-biased BJT, the base is connected to a positive voltage source before the device is turned on. This provides a base bias which allows the transistor to switch on and off when an appropriate gate voltage is applied.

The DDTA115GUA-7 is a high-voltage, high-current NPN Bipolar Junction Transistor. It is rated for collector-emitter voltage (VCE) of 100V, and collector-emitter current (IC) of 115A. The device has a wide operating temperature range of -65°C to +150°C. It also features a large current gain of 100 minimum at 1A Collector current, and an excellent cutoff frequency of 1.2kHz.

The DDTA115GUA-7 is commonly used in DC-DC converters, relay drivers, and motor control electronics due to its high current-switching capability, wide operating temperature range, and high reliability. It can also be used in power supplies and automotive applications.

The DDTA115GUA-7 works on the principle of the transistor action. When the base-emitter diode is forward-biased, electrons are “injected” from the emitter into the base region. These electrons are attracted to the positive potential applied at the collector side, and this results in a current flow from the collector to the emitter. The current gain of the device is determined by the number of electrons injected into the base region, and the ratio of collector current to base current.

The DDTA115GUA-7 is a robust and reliable high voltage, high current switching device. It is used in a wide range of applications due to its high current switching capability and wide operating temperature range.

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