DDTA123EUA-7 Discrete Semiconductor Products |
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Allicdata Part #: | DDTA123EUADITR-ND |
Manufacturer Part#: |
DDTA123EUA-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS PNP 200MW SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DDTA123EUA-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 20mA, 5V |
Base Part Number: | DDTA123 |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 2.2 kOhms |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
Description
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DDTA123EUA-7 Pre-Biased Single Bipolar Transistor
DDTA123EUA-7 is a high-voltage NPN Pre-Biased single bipolar junction transistor (BJT). It is designed and manufactured by ST Microelectronics. This transistor is an ideal solution for applications requiring high-voltage operations up to 420 volts to the base of the transistor. It is also capable of operating in the temperature range of -55°C to 175°C.The DDTA123EUA-7 features a high current gain of 10 maximum and a collector-emitter saturation voltage of 175 mV. It also features a low collector-emitter saturation voltage of 350 mV at a gate voltage of 5 volts and a maximum collector-base breakdown voltage of 450 volts. The DDTA123EUA-7 is designed with an integrated source resistor, which helps reduce the stress applied to the collector to emitter junction due to the high voltage drop across it.This transistor is commonly used in industrial motor control systems as well as in power supplies, power inverters and motor drives. It can also be used in high-voltage switching applications such as DC-DC converters, dc contactors and power controllers.The working principle of the DDTA123EUA-7 Pre-Biased single bipolar transistor is similar to that of other single bipolar junction transistors. The base-emitter junction acts as a diode, allowing current to flow from the emitter to the collector only when a sufficient voltage is applied to the base. This transistor is also able to handle high voltages, allowing it to be used in high-voltage applications.The DDTA123EUA-7 Pre-Biased single bipolar transistor is a versatile device that is capable of delivering high performance and reliability in applications that require high-voltage operations. Its high current gain, low collector-emitter saturation voltage, and integrated source resistor make it the ideal choice for industrial motor control systems, power supplies, power inverters, motor drives and high-voltage switching applications.The specific data is subject to PDF, and the above content is for reference
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