DDTA144EE-7-F Allicdata Electronics
Allicdata Part #:

DDTA144EE-FDITR-ND

Manufacturer Part#:

DDTA144EE-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS PNP 150MW SOT523
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DDTA144EE-7-F datasheetDDTA144EE-7-F Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Resistor - Emitter Base (R2): 47 kOhms
Base Part Number: DDTA144
Supplier Device Package: SOT-523
Package / Case: SOT-523
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Series: --
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DDTA144EE-7-F is a single, pre-biased bipolar junction transistor (BJT) manufactured by STMicroelectronics, a global leader in semi-conductor production. This device is a high-current and high-voltage device, capable of handling upto one watt of power while switching up to three amps of DC current. This transistor is a complement to the DDTA145EE-7-F and DDTA147EE-7-F which are both pre-biased for other current and voltage requirements.

The DDTA144EE-7-F is a type of NPN bipolar junction transistor (BJT) which is made from two identical layers of a semiconductor material such as silicon. These layers are called the base and the collector. The collector layer is thicker than the base due to the variation of doping concentrations. A lead is attached to the underside of the collector layer and is used to supply the collector current. The base of the transistor has two contacts, the collector contact and the emitter contact. Each contact is named for the type of current that it conducts.

The functionality of the DDTA144EE-7-F relies on the process of "biasing", the process of changing the voltage on the base terminal to increase or decrease the gain of the current gain. This transistor is pre-biased to optimize the performance of the device and reduce its complexity. This bias can be adjusted using a user supplied voltage. This transistor also has a fairly low electrical noise rating, making it perfect for high-frequency applications.

The applications of the DDTA144EE-7-F reflects its pre-biased and high-current characteristics. This device is well suited for high-power switching applications such as motor control and power management. The high current gain and low on-resistance of this device also makes it ideal for amplifying audio signals, making it popular amongst consumer audio applications such as car audio amplifiers and outdoor sound systems. In addition, this device can also be used in photovoltaic applications to control the power supplied to solar cells.

The DDTA144EE-7-F is an excellent device due to its pre-biased characteristics and high-current capabilities. This device is well suited for a wide variety of applications which call for high-power switching and amplification. Furthermore, its low electrical noise rating makes it well-suited for high-frequency applications such as car audio amplifiers and motor control. All in all, the DDTA144EE-7-F is an excellent choice for applications which require a high-current and pre-biased bipolar junction transistor.

The specific data is subject to PDF, and the above content is for reference

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