DMJ70H1D3SI3 Allicdata Electronics
Allicdata Part #:

DMJ70H1D3SI3DI-ND

Manufacturer Part#:

DMJ70H1D3SI3

Price: $ 0.87
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 700V 4.6A TO251
More Detail: N-Channel 700V 4.6A (Tc) 41W (Tc) Through Hole TO-...
DataSheet: DMJ70H1D3SI3 datasheetDMJ70H1D3SI3 Datasheet/PDF
Quantity: 60
1 +: $ 0.78750
75 +: $ 0.62891
150 +: $ 0.55024
525 +: $ 0.42673
1050 +: $ 0.33689
Stock 60Can Ship Immediately
$ 0.87
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: TO-251
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 41W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 351pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Drain to Source Voltage (Vdss): 700V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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Introduction

DMJ70H1D3SI3 is a type of metal-oxide-semiconductor-field-effect transistor (MOSFET) and can have a wide range of application fields. In this article, the application field and working principle of the DMJ70H1D3SI3 are analyzed in detail.

Application Field

Due to its wide range of characteristics, DMJ70H1D3SI3 can be applied to various fields. DMJ70H1D3SI3 are most commonly used in power electronics. This type of transistors is highly efficient due to its low on-resistance and high avalanche rating. Because of this, it is suitable for power-on and power-off functions as well as providing very efficient switching for high power loads. Additionally, the DMJ70H1D3SI3 can also be used in motor control, audio amplifiers, light dimmers etc.

Working Principle

DMJ70H1D3SI3 are P-channel MOSFETs, which require a positive bias voltage at the gate to turn them on. When a positive bias voltage is applied to the gate, the MOSFET is turned on, allowing electrons from the drain to pass through the channel in the substrate and reach the source. As the electrons flow from the drain to the source, a current is created in the direction of the source. The channel that allows electrons to flow is controlled by the gate voltage, which is applied to the gate electrode. By increasing or decreasing the gate voltage, the amount of current electron can pass through the channel can also be increased or decreased, respectively.

Conclusion

DMJ70H1D3SI3 is a type of MOSFET, which can be widely used in various application fields such as power electronics, motor control, audio amplifiers, and light dimmers. Additionally, the DMJ70H1D3SI3 operates on a working principle such that an applied gate voltage is used to control the flow of electrons from the drain to the source for the generation of current.

The specific data is subject to PDF, and the above content is for reference

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