DMJ70H1D3SJ3

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The DMJ70H1D3SJ3 is a single-channel N-Channel MOSFET. It is an advanced FET (Field Effect Transistor) that operates by the principles of a MOSFET (metal-oxide semiconductor FET).

The DMJ70H1D3SJ3 is a power MOSFET with low on-state resistance that has efficient switching capabilities. It is designed for low and high-side switches for DC motor applications, as well as for lighting applications such as LED and CFL lamps. It has a low gate threshold voltage and an ultra-low drain source on-resistance, which makes it an ideal choice for high-efficiency and high-power applications.

The DMJ70H1D3SJ3 is also ideal for switching applications in power supplies and power management circuits. It is ideal for adjustable PWM applications such as dimming and brightness control. It is also suitable for IGBT after-driver circuits and other high-power linear regulation applications.

The DMJ70H1D3SJ3 has a drain-source breakdown voltage of 70V and a continuous drain current of 58A. It has a RDS(ON) of 0.011Ω and is able to operate at a maximum junction temperature of 150C. It is RoHS-compliant and has an extended lead timeslot of 5 days.

As a MOSFET, the DMJ70H1D3SJ3 works on the principle of electric field effect transistor. This type of transistor uses the movement of electrons in a semiconductor material (generally silicon) to carry current from source to drain. It works by creating an electric field that allows electrons to move from the source to the gate. The electric field is then shaped by the gate voltage, allowing the electrons to expand further into the drain. The gate voltage controls the drain current, allowing the MOSFET to act as a switch and amplify the current between the source and the drain.

In summary, the DMJ70H1D3SJ3 is a single-channel N-Channel MOSFET that is ideal for applications such as low and high-side switches for DC motor applications, as well as for lighting applications such as LED and CFL lamps. It has a low gate threshold voltage, an ultra-low drain source on-resistance, and a drain-source breakdown voltage of 70V. It has a maximum junction temperature of 150C and is RoHS-compliant. It works on the principle of electric field effect transistor and is able to act as a switch and amplify the current between the source and the drain. With its low on-state resistance and efficient switching capabilities, the DMJ70H1D3SJ3 is an ideal choice for those seeking high-efficiency and high-power applications.

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