DMJ70H601SK3-13 Allicdata Electronics
Allicdata Part #:

DMJ70H601SK3-13-ND

Manufacturer Part#:

DMJ70H601SK3-13

Price: $ 1.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CHANNEL 700V 8A TO252
More Detail: N-Channel 700V 8A (Tc) 125W (Tc) Surface Mount TO-...
DataSheet: DMJ70H601SK3-13 datasheetDMJ70H601SK3-13 Datasheet/PDF
Quantity: 1000
75 +: $ 0.90678
Stock 1000Can Ship Immediately
$ 1.01
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 686pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 20.9nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 700V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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DMJ70H601SK3-13 is a single rectangular N-Channel MOSFET in a common drain configuration. It is usually used in power electronics application due to their higher power dissipation capability, low gate drive power and output capacitive capabilities. It has been developed for high current switching applications requiring low gate drive power. In addition to its good characteristics, it can provide a wide range of operating voltages from 0 to 65V and high switching speed of less than 1 nanosecond.

MOSFET was first invented in the 1940s, it took a long time to develop the device. Now MOSFETs are used in a wide range of consumer electronics, computers, and other applications. The DMJ70H601SK3-13 is a latest generation enhancement mode MOSFET. This type of MOSFETs is reinforced with a low current gate drive power and high current carrying capability. It is more robust than its predecessors and hence has become the go-to device for many power electronic applications.

The working principle of the DMJ70H601SK3-13 is simple. It is a two terminal device, the gate terminal and the drain terminal. The gate terminal controls the current flow between the source and the drain terminals. When the gate terminal is triggered, the current flows between the source and the drain terminals due to the presence of the built-in electric field. This current flow is known as the drain current. One of the most striking characteristics of MOSFETs is their low gate-to-drain capacitance, which results in a low input capacitance. This allows for higher switching speed and lower voltage drop, thereby improving the efficiency of the device.

The DMJ70H601SK3-13 finds its application primarily in motor driver circuits, DC-DC converter circuits and power management applications. Due to its high current carrying capability and low gate drive power, it can be used in high current switching applications. Its wide range of operating voltages and high switching speed makes it ideal for power management applications such as battery chargers, DC-DC converters, and high power audio amplifiers.

The DMJ70H601SK3-13 has a few advantages over its counterparts, such as its high current carrying capability, low gate drive power, wide range of operating voltages, and high switching speed. Furthermore, it is small and light, making it ideal for applications where size and weight are a concern. All these features make the DMJ70H601SK3-13 one of the most popular devices for power electronics applications.

The specific data is subject to PDF, and the above content is for reference

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