DMJ70H1D5SV3 Allicdata Electronics
Allicdata Part #:

DMJ70H1D5SV3-ND

Manufacturer Part#:

DMJ70H1D5SV3

Price: $ 0.70
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CHANNEL 700V 5A TO251
More Detail: N-Channel 700V 5A (Tc) 78W (Tc) Through Hole TO-25...
DataSheet: DMJ70H1D5SV3 datasheetDMJ70H1D5SV3 Datasheet/PDF
Quantity: 1000
75 +: $ 0.62891
Stock 1000Can Ship Immediately
$ 0.7
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: TO-251
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 78W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 316pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 700V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The DMJ70H1D5SV3 transistor is a single N-channel MOSFET which functions as a high-speed switching device. This type of transistor is frequently used in power electronics such as high-power audio amplifiers, power supplies and switching power converters. It is manufactured by Diodes and is rated for load currents up to 70A and has a RDS(on) of less than 10 mOhm. The transistor is also available with a variety of breakdown voltage ratings and is suitable for use in a wide range of applications.

A MOSFET is a type of transistor that uses metal oxide semiconductor technology to allow current to pass through it. This is done by changing the voltage applied to its gate terminal, which then controls the flow of current through the source and drain terminals. As a result, MOSFETs can be used to regulate the amount of current passing through the device, allowing them to act as switches and providing the necessary control when switching large currents.

The DMJ70H1D5SV3 MOSFET has a wide range of applications including power converters, power control and motor control circuits. It is also used in audio amplifiers and power supplies, where it is inherently capable of handling large power levels without significant power losses. The ability to control the current flow throughout the device also makes it ideal for use in switching converters, where it can be used to switch between different components. In addition to this, the MOSFET can be used as a synchronous rectifier, allowing the use of more efficient forms of power conversion.

The working principle of the DMJ70H1D5SV3 MOSFET is fairly simple: a voltage is applied to the gate terminal, which then controls the flow of current through the source and drain terminals. This is done by changing the voltage applied to its gate terminal, which then controls the flow of current through the source and drain terminals. When the voltage is increased, more current will flow through the device, allowing for faster switching times. Conversely, when the voltage is decreased, the current flow is restricted and switching times are reduced.

The use of a MOSFET in power electronics applications is ideal due to its low on-state resistance, high efficiency, and fast switching times. Furthermore, the device is capable of handling large current and power levels with reduced power losses, making it an ideal choice for a variety of applications.

In conclusion, the DMJ70H1D5SV3 is a single N-channel MOSFET transistor suitable for use in power electronics applications such as audio amplifiers, power supplies and power converters. It is rated for load currents up to 70A, while its low RDS(on) allows it to switch between components quickly and efficiently. Its fast switching times make it suitable for use in switching applications, while its low on-state resistance allows it to handle high power levels without significant power losses. As a result, the DMJ70H1D5SV3 is a versatile device and is an ideal choice when switching high current or power levels.

The specific data is subject to PDF, and the above content is for reference

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