
DMJ7N70SK3-13 Discrete Semiconductor Products |
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Allicdata Part #: | DMJ7N70SK3-13DITR-ND |
Manufacturer Part#: |
DMJ7N70SK3-13 |
Price: | $ 0.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 700V 3.9A |
More Detail: | N-Channel 700V 3.9A (Tc) 28W (Tc) Surface Mount TO... |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 0.45644 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 28W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 351pF @ 50V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 13.9nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.25 Ohm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.9A (Tc) |
Drain to Source Voltage (Vdss): | 700V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMJ7N70SK3-13 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with Dynamic dV/dt Rating and Avalanche SoA capabilities. It has become widely used in various fields and is known for its power switching, high speed switching, and inverters. This article will look at the application fields and working principles of the DMJ7N70SK3-13.
The DMJ7N70SK3-13 is mainly used in applications where high current and high speed performance is of utmost importance. Some examples of this include power conversion, motor control, and robot controls. It is also used in a wide range of high speed and power switchgear, from household appliances to industrial systems.
The DMJ7N70SK3-13 is typically used in switch mode power supplies and power conversion circuits, where high-speed switching and peak switching current are essential. In addition to its high speed performance, the DMJ7N70SK3-13 also has superior power efficiency and low switching losses. This is due to the device\'s low-voltage conduction characteristics and low RDS(ON) resistance.
The DMJ7N70SK3-13’s outstanding speed performance is due to its Dynamic dV/dt Rating and Avalanche SoA capabilities. Its Dynamic dV/dt Rating, or differential rate of change of voltage, is one of the highest among modern MOSFETs, allowing it to produce high level performance with high frequency switching. On the other hand, its Avalanche SoA capability entails that the transistor has excellent protection against momentary overvoltage and overcurrent.
The DMJ7N70SK3-13 works by using the gate terminal to control the drain and source current. If a positive voltage is applied to the gate, it will create an electric field which will attract the electrons from the substrate and the source terminal. This will allow the current to flow from the source to the drain. When the voltage is removed from the gate, the electric field collapses and the current stops flowing.
In conclusion, the DMJ7N70SK3-13 is an N-Channel MOSFET used in applications requiring high current and high speed performance. Its Dynamic dV/dt Rating and Avalanche SoA capabilities allow for superior power efficiency and low switching losses. Furthermore, it works by using the gate terminal to control the source and drain current. The DMJ7N70SK3-13 is an indispensable component in switch mode power supplies and power conversion circuits.
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