Allicdata Part #: | DMJ70H600SH3-ND |
Manufacturer Part#: |
DMJ70H600SH3 |
Price: | $ 1.17 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET BVDSS: 651V 800V TO251 |
More Detail: | N-Channel 700V 11A (Tc) 113W (Tc) Through Hole TO-... |
DataSheet: | DMJ70H600SH3 Datasheet/PDF |
Quantity: | 1000 |
75 +: | $ 1.05050 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-251-3, IPak, Short Leads |
Supplier Device Package: | TO-251 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 113W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 643pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 18.2nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 2.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 700V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The DMJ70H600SH3 is a highly advanced field-effect transistor (FET) that is designed for use in power supply circuits, power converters, motor drives, and amplifier systems. It is a single N-channel MOSFET with a maximum of 500V breakdown voltage, a 220mA/19Ω continuous drain current, and a 7.0 mΩ maximum on-resistance. The DMJ70H600SH3 is highly efficient, providing excellent stability, low on-resistance, and low switching losses. It is suitable for a variety of applications including power supply systems, power converters, motor drives, audio amplifier systems, and digital switching systems.
The key feature of the DMJ70H600SH3 is its high performance and high-end efficiency, providing excellent stability and low switching losses. This FET is an ideal choice for applications where performance, reliability, and safety are paramount. The DMJ70H600SH3\'s on-resistance is low enough to ensure high efficiency in power-supply designs, and its low threshold voltage minimizes switching losses. In addition, the DMJ70H600SH3 employs advanced short-circuit protection that prevents over-currents and overheating, thereby limiting damage to the device.
The DMJ70H600SH3 is designed to operate in a single N-channel MOSFET configuration and is typically used in conjunction with another FET. This configuration is often referred to as a cascaded source-drain structure which allows for excellent switching capabilities with minimal losses. The two MOSFETs are connected in a series configuration, wherein the gate of the first FET is connected to the drain of the second FET. When a voltage is applied to the gate of the first FET, the current flows through both FETs, resulting in a lower on-resistance. This FET configuration is well suited for power applications, where efficiency is desired and switching losses should be minimized.
In addition to its cascaded source-drain configuration, the DMJ70H600SH3 also employs a unique avalanche breakdown technology. This technology dynamically adjusts the breakdown voltage according to the magnitude of the applied current, ensuring optimum operation. This feature allows the DMJ70H600SH3 to handle inductive loads, switching applications, and other similar power circuits with greater efficiency and less loss.
The DMJ70H600SH3 is an ideal choice for a variety of power applications, including power supply systems, power converters, motor drives, audio amplifier systems, and digital switching systems. Its efficient and reliable operation, coupled with advanced protection features, make it a great choice for any power application. Furthermore, its cascaded source-drain configuration and unique avalanche breakdown technology provides superior efficiency, low on-resistance, and low switching losses, making it the ideal choice for power applications requiring the highest levels of performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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