DMP6050SSD-13 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 P-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	4.8A
Rds On (Max) @ Id, Vgs:	55 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	1293pF @ 30V
Power - Max:	1.2W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

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Introduction to DMP6050SSD-13

The DMP6050SSD-13 is a high performance, low gate charge and low RDS(on) Power MOSFET. It is a popular choice for a wide variety of applications, from high frequency switching applications, to DC-DC power converters, to automotive power management systems. It can also be used for many common applications, such as relay/contactors, battery chargers/solvers, and battery management systems.This device is part of a family of products that feature low on-resistance (RDS(on)) and an industry-leading Qg. This means that it is an ideal choice for applications that require the lowest possible power loss and highest possible efficiency. Additionally, it features an improved design that reduces EMI in comparison to other MOSFETs.

Applications of DMP6050SSD-13

The DMP6050SSD-13 is a versatile Power MOSFET that is suitable for a wide variety of applications. It is ideal for use in high frequency switching applications such as upsampling, polarity switching, and motor control. Additionally, it is an excellent choice for high current DC-DC power converters and automotive power management systems.In addition to these uses, the DMP6050SSD-13 can also be used for many common applications, including contactors/relays, battery chargers/solvers, and battery management systems. Due to its low on-resistance and excellent Qg, the device provides superior performance at a competitive price.

Working Principle of DMP6050SSD-13

The DMP6050SSD-13 is a unique Power MOSFET that uses advanced design techniques to reduce gate charge (Qg) and increase on-resistance (RDS(on)). This enables the device to handle higher current loads, while providing low power loss and high efficiency. The device is constructed using a metal oxide semiconductor (MOS) process, which provides increased switching speeds and improved EMI control. Additionally, the device can be easily integrated into a variety of circuit designs thanks to its single-channel construction.The device’s gate voltage is proportional to the drain-source current. This means that when the gate voltage is increased, the drain-source current increases, and vice versa. The device also uses a negative-charge gate, which helps to reduce power loss even further.

Conclusion

The DMP6050SSD-13 is a high performance Power MOSFET that is suitable for a wide variety of applications. It features low gate charge and low RDS(on), leading to improved efficiency and reduced power loss. Additionally, it is well suited for high frequency switching applications, DC-DC converters, and automotive power management systems. It also has an improved design that reduces EMI. The device is constructed using a MOS process, and features a single-channel design for easy integration into circuit designs.

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