Allicdata Part #: | DMP6110SFDF-13-ND |
Manufacturer Part#: |
DMP6110SFDF-13 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 60V 4.2A UDFN2020-6 |
More Detail: | P-Channel 60V 4.2A (Ta) 1.97W (Ta) Surface Mount U... |
DataSheet: | DMP6110SFDF-13 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.09781 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | U-DFN2020-6 (Type F) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.97W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 969pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17.2nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMP6110SFDF-13 is a logic level N-channel enhancement mode MOSFET (metal oxide semiconductor field effect transistors) from Diodes Incorporated, a leading provider of semiconductor solutions. Thisand other types of MOSFETs are widely used in various applications, such as power management, communications, industrial, switching and computing systems, etc. This article will discuss the application fields and working principles of the DMP6110SFDF-13.
Application Fields
The DMP6110SFDF-13 is suitable for use in general purpose switching applications, especially those including a drain voltage up to 55 V, a load up to 5A, and a low gate drive of 5 mA. It supports both direct off-state control as well as a controlled “slow-switch” of the power device. In addition, it is a suitable choice for both through-hole and top-side soldering processes.
In addition, due to its low VGS(th1) (gate-source threshold voltage), the DMP6110SFDF-13 can be used in a variety of applications where rapid switching of heavy load currents is required. It is widely applied to control the power of computers, smartphones and electronic circuits. In automotive applications, it can be used to control voltage regulators, airbags, and lighting.
Working Principle
The function of the MOSFET is based on the physical principles of metal oxide semiconductor field effect transistors. The MOSFET is a unipolar device controlled by majority carriers, with the ability to handle either voltage or current control. The major parts of MOSFETs are the body (which is normally connected to the source of the transistor), the gate (which is connected to the control element) and the drain (which is the output of the transistor).
When a voltage is applied between the gate and the source of the DMP6110SFDF-13, the conduction of electric current between the drain and the source is controlled. The gate voltage will determine the electrical field between the gate and the body of the transistor. The higher the gate voltage, the greater the electric field, and therefore the more electrons can be carried away. This in turn will control the current flowing through the drain.
The excellent performance of the device can be attributed to its fast switching capability and its low on-state resistance. With a low on-state resistance, the device is well-suited for powering high current loads. Additionally, its wide drain-source voltage and drain current ratings make it suitable for use in applications like motor control and DC-DC converters.
Overall, the DMP6110SFDF-13 is an ideal choice for general purpose switching applications, due to its compatibility with various power supply systems, fast switching capability, low on-state resistance, and wide drain current ratings. The application fields and working principles of the device discussed in this article are sure to provide readers with a better understanding of its functions and capabilities.
The specific data is subject to PDF, and the above content is for reference
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