DMP6185SE-13 Discrete Semiconductor Products |
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Allicdata Part #: | DMP6185SE-13DITR-ND |
Manufacturer Part#: |
DMP6185SE-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET PCH 60V 3A SOT223 |
More Detail: | P-Channel 60V 3A (Ta) 1.2W (Ta) Surface Mount SOT-... |
DataSheet: | DMP6185SE-13 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 708pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 2.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMP6185SE-13 is a type of transistor commonly found in electronic devices. It is a single MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which is an integral part of components used for switching and amplifying electrical signals. This particular type of transistor is made from processes that use an insulated gate to control a current from source to drain.
Application Field of DMP6185SE-13
The DMP6185SE-13 has many versatile applications, it can be used to regulate current and voltage in computers, automobiles, and communication systems. One of its most common uses is as a switch in high power applications. It is also ideal for power supplies, audio amplifiers, switches, LED lighting and motor control. This technology is also used for power regulation in switching power supplies, automotive power modules and motor control systems in cruise ships and airplanes.
Working Principle of DMP6185SE-13
MOSFETs use a thin layer of electrically insulating material, called the gate dielectric, to control the flow of electrical current. When the gate dielectric is exposed to a voltage, an electrical charge is created, allowing for control over the current flowing between source and drain terminals. In electronics, this can be used to control the flow of current through circuits, amplifying signals or boosting power.
The DMP6185SE-13 utilizes a substrate that is made from silicon and a channel layer that is made from a silicon oxide material. The channel layer (separate from the substrate) contains a source and a drain that are connected by an insulated gate. This allows the charge created by an external voltage to control the current between source and drain and can be used to turn a circuit on or off. As the channel layer is made up of an oxide material, this allows the transistor to be used in higher current and voltage load applications.
Additionally, the DMP6185SE-13 is also designed for higher frequency applications, meaning that it can switch at faster speeds than comparable transistors, which makes it ideal for use in modulation and switching applications.
Conclusion
In conclusion, the DMP6185SE-13 is a single MOSFET, or Metal Oxide Semiconductor Field Effect Transistor, device which is commonly found in telecommunication, automotive, and computer applications. It is designed with a substrate and a channel layer, which is made of an oxide material and contains a source and drain that are connected by an insulated gate. This single MOSFET can be used to switch, regulate current and voltage, and amplify signals, allowing it to be used in a variety of electronic applications. It is especially useful for higher current and voltage load applications as well as for high frequency modulation and switching applications.
The specific data is subject to PDF, and the above content is for reference
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