Allicdata Part #: | DMP6023LFGQ-13-ND |
Manufacturer Part#: |
DMP6023LFGQ-13 |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET PCH 60V 7.7A POWERDI |
More Detail: | P-Channel 60V 7.7A (Ta) 1W (Ta) Surface Mount Powe... |
DataSheet: | DMP6023LFGQ-13 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.19698 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerDI3333-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 155°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2569pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 53.1nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.7A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMP6023LFGQ-13 is a power MOSFET produced by Diodes Incorporated. It is a single-channel, logic level Field Effect Transistor (FET) that operates at -55°C to 150°C. The device is designed for applications such as power conversion, DC-DC converters, high-frequency switching, unipolar power switching, and other applications that require high power density.
The DMP6023LFGQ-13 is a P-Channel MOSFET with a drain-source voltage of 60V and a 0.0020 ohm maximum on-resistance. The device has an input logic level of 5V and features a low gate drive voltage of 2V. The device has an excellent thermal performance, with a maximum power dissipation of 4W. The device is RoHS compliant, lead-free, and halogen-free. It comes in a MSO-10EP package and is AEC-Q101 qualified.
The DMP6023LFGQ-13 is a logic level FET that works in two main principles: conductance modulation for current flow, and gate control for device operation. The flow of current in a FET is controlled by the voltage applied to its gate terminal, which acts as a control valve. When a voltage is applied to the gate terminal, it causes a change in the device\'s conduction characteristics. This allows the current flow to be modulated, creating the desired effect. The operating voltage of the DMP6023LFGQ-13 is about 2V, allowing for a low gate drive voltage and excellent power distribution.
The DMP6023LFGQ-13 is an ideal choice for applications that require high power density, such as high-frequency switching and unipolar power switching. It is also suitable for applications that require a low threshold voltage and high switching speed, as its low gate drive voltage allows for fast switching times. Additionally, the device is RoHS compliant and AEC-Q101 qualified, making it suitable for a wide range of applications.
In conclusion, the DMP6023LFGQ-13 is a power MOSFET that is suitable for a wide range of applications. It features a low threshold voltage and high power density, and is RoHS compliant and AEC-Q101 qualified. The device works by operating through two main principles: conductance modulation and gate control, allowing for excellent power distribution and fast switching times. The device is an excellent choice for applications that require high power density and low threshold voltage.
The specific data is subject to PDF, and the above content is for reference
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