DMP6110SSSQ-13

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

• DMP6110SSSQ-13 Application Field and Working Principle

• DMP 6110SSSQ-13 is a single N-channel, Enhancement-mode, Vertical DMOS FET (Field-Effect Transistor) with advanced processing techniques. It is usually used in applications including power supplies, battery-powered systems, wireless applications, high-efficiency DC-DC converters, DC motor speed control, and voltage regulator designs.

  The DMP6110SSSQ-13 can be used in a majority of situations where a low-noise circuit with a low-voltage threshold and very low On-State resistance is desirable. With its robust gate-source voltage capability and current handling capability it can be used in a variety of applications ranging from high-efficiency switching regulators, motor, drives and DC-DC converters to discrete designs.

  The DMP6110SSSQ-13 operates on the basic principle of Field-Effect Transistor (FET). It is constructed with a gate and source terminal connected to the semiconductor substrate. The gate terminal controls the flow of current from the source to the drain. When the gate voltage is low, the current between source and drain will be low; conversely, when the gate voltage is increased, the current between source and drain increases. It works according the voltage applied to its gate terminal.

  The DMP6110SSSQ-13 is composed of N-channel MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). This device has a silicon substrate which is connected to three terminals – gate, source, and drain. Unlike BJT, the MOSFET’s gate terminal is insulated from the channels and therefore, the current between source and drain is determined by the gate bias voltage. For example, if the gate voltage is positive, the current will lead to source (negative to drain) and vice versa. The drain and source terminals of MOSFET can also be reversed to turn it into a P-channel MOSFET.

  The DMP6110SSSQ-13 offers high performance and reliability with its optimized feature set, including lower RDS(on) and BSG (Body to Source Breakdown Voltage). This device also provides for a low voltage drop and high efficiency which is desirable in applications such as battery powered systems, wireless applications, and high-efficiency power supplies.

  In summary, the DMP6110SSSQ-13 is a single N-channel, Enhancement-mode Vertical DMOS FET. It is suitable for applications that require a low-noise circuit, low-voltage threshold, and very low On-State resistance. The device has excellent gate-source voltage capability and current handling capability making it suitable for a variety of applications including high-efficiency switching regulators, motor drives, and DC-DC converters.

The specific data is subject to PDF, and the above content is for reference