Allicdata Part #: | DMP6110SSDQ-13-ND |
Manufacturer Part#: |
DMP6110SSDQ-13 |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CHANNEL 60V 7.8A 8SO |
More Detail: | P-Channel 60V 7.8A (Tc) 1.2W (Ta) Surface Mount 8-... |
DataSheet: | DMP6110SSDQ-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.17470 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 969pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17.2nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 105 mOhm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.8A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMP6110SSDQ-13 is a single N-Channel MOSFET transistor component. It is designed as an enhancement mode transistor that operates as an electronic switch capable of controlling large currents with precision. This component is ideally suited for applications that require low on-state resistance, high switching speed, and efficient heat dissipation.
An N-Channel MOSFET transistor has a relatively simple structure composed of a source, drain and gate terminal. The source and drain terminals are the two resistor-like electrical contacts through which current is passed, while the gate terminal is used to control the flow of current between the source and the drain terminals. By controlling the electric field that passes between the gate and the source and drain, the transistor can be used to regulate the flow of current between two points. Generally, a positive voltage applied to the gate terminal allows current to flow from the source to the drain, while a negative voltage causes the current to stop flowing. As a result, these transistors can be used to control the flow of electrical current from one part of a circuit to another with precision.
The DMP6110SSDQ-13 transistor is typically used in power applications, including power frame management and power supply bypassing, as well as automotive, industrial, computing and avionic applications where precision current control is required. This component is also well-suited to a variety of logic-level and medium to high-current applications due to its relatively low on-state resistance as well as its fast switching speed. This MOSFET transistor also offers improved power dissipation performance, making it well-suited to high-power applications where a durable and reliable transistor design is required.
In order to operate the DMP6110SSDQ-13, a voltage must be applied to the gate in the proper polarity, which is typically a negative voltage for on-mode operation. When the gate voltage is applied, current is allowed to flow between the source and the drain, resulting in the transistor being in the on-state. The source voltage is typically between 0 and 5 volts, while the drain voltage is from 0 to the supply voltage. In the off-state, the source and gate voltages remain at 0 volts, and current does not flow from the source to the drain.
The DMP6110SSDQ-13 is an efficient and reliable MOSFET transistor for a variety of power management and current regulation applications. When coupled with a proper voltage source, this transistor is able to control current precisely and offer low resistance, high switching speed, and improved power dissipation performance. As a result, it is ideally suited for automotive, industrial, avionic and computing applications and power frame management, power supply bypassing, as well as logic-level and medium to high-current applications.
The specific data is subject to PDF, and the above content is for reference
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