DMP6110SVTQ-13

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The DMP6110SVTQ-13 is a depletion mode N-Channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). It is designed for high power switch applications and is suitable for high power circuits.

The DMP6110SVTQ-13 is a vertical power MOSFET that can handle a maximum drain current of up to 26.5 Amps, a maximum drain-source voltage of 400V and a maximum drain-source On-state resistance of 0.22 Ohms. This high power capability of the DMP6110SVTQ-13 allows for a very efficient power switch for a wide range of applications such as automotive body control, power management, energy efficient AC/DC converters, motor drives, and DC-DC converters.

The maximum junction temperature of the DMP6110SVTQ-13 is 125°C and the die is packaged in an RoHS compliant QFN package with a lead frame plate and solder balls contacts that enable easy mounting on a printed circuit board. The static drain-source On-state resistance is 0.22 Ohms typical which makes the device suitable for low drop out applications.

The working principle of the DMP6110SVTQ-13 is to provide an on-state drain-source voltage drop of less than 0.3V and an on-state drain-source current of 26.5A. The DMP6110SVTQ-13 is a depletion mode power MOSFET, which means that the gate-source voltage is negative, causing the MOSFET to be in a forward or closed state. When the gate voltage is brought higher than the drain voltage, the MOSFET is in an off-state. The device also has a very low drain current leakage and a low Off-state output capacitance and therefore is suitable for high frequency switching applications.

The DMP6110SVTQ-13 is suitable for many applications such as motor control, power conversion, energy management, lighting, and audio controls. It is suitable for power switch applications because of its high power capability, low on-state resistance, and low frequency switching capability. The device has been tested to comply with industrial standard specifications and offers a high degree of reliability.

The DMP6110SVTQ-13 is a single depletion mode N-channel MOSFET with a maximum drain current of up to 26.5 Amps, a maximum drain-source voltage of 400V, and a maximum drain-source on-state resistance of 0.22 Ohms. It is suitable for many applications such as motor control, power conversion, energy management, lighting, and audio controls. The device has a very low drain current leakage and a low Off-state output capacitance which makes it suitable for high frequency switching applications. It has a maximum junction temperature of 125°C and is packaged in an RoHS compliant QFN package and therefore offers a high degree of reliability in its application.

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