| Allicdata Part #: | DMP6185SEQ-13-ND |
| Manufacturer Part#: |
DMP6185SEQ-13 |
| Price: | $ 0.85 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET P-CHANNEL 60V 3A SOT223 |
| More Detail: | P-Channel 60V 3A (Ta) 2.2W (Ta) Surface Mount SOT-... |
| DataSheet: | DMP6185SEQ-13 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.85000 |
| 10 +: | $ 0.82000 |
| 100 +: | $ 0.76000 |
| 1000 +: | $ 0.64000 |
| 10000 +: | $ 0.40000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | TO-261-4, TO-261AA |
| Supplier Device Package: | SOT-223 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.2W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 708pF @ 30V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 150 mOhm @ 2.2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The DMP6185SEQ-13 is a transistor type power MOSFET, with N channel enhancement-mode MOSFET type. It is typically used in any application where high power switching applications is desired. This transistor is well suited for applications in high power devices such as SMPS, motor drives, lighting and power management.
The device is constructed with a Si-based N-channel MOS transistor and has an extremely low on-resistance of 5 milliohms, making it ideal for high efficiency and large power dissipation. This allows the device to be used in higher frequency applications, e.g., in Hi-Rel applications in the automotive and military sectors. The DMP6185SEQ-13 power MOSFET is designed for use with low gate voltage drive and can be operated with gate voltage as low as 0.8V. This makes the device ideal for applications that require extremely low gate drive voltages such as communications and point-of-load conversion.
The DMP6185SEQ-13 device is packaged in a TO-220 package with clip for attaching it to a heatsink. This helps in dissipating the heat generated during high current and/or temperature applications. The device also has an operating temperature range of -55°C to +150°C, making it suitable for fixing in any application, irrespective of the ambient temperature.
The working principle of the DMP6185SEQ-13 is based on the field effect transistor (FET) technology, which is also known as a switch. The MOSFET uses a gate electrode or terminal to control the current flow. A voltage applied to the gate terminal changes the transistor’s resistance between its source and drain terminal, due to the impurities in the semiconductor. By doing so, it either increases or decreases the flow of current between these two terminals, depending upon the voltage applied to the gate.
The main purpose of the DMP6185SEQ-13 is to provide high power switching capabilities with low power dissipation. This is achieved by the MOS technology construction employed in the device. This technology helps reduce the resistance in the channel and increase power efficiency. The DMP6185SEQ-13 also provides excellent temperature performance, having an operating temperature range of -55°C to +150°C.
This makes the DMP6185SEQ-13 ideal for use in applications such as switching power supplies, motor drives, and lighting systems. It is also suitable for use in highly integrated circuits, as it can operate at high frequencies, making it a fast switching device. The device also has a low gate drive voltage, e.g., 0.8V, making it ideal for applications where extremely low power dissipation is required. The DMP6185SEQ-13 is also designed for assembly in a TO-220 package with a clip for attaching to a heatsink, which helps in dissipating heat generated from high current and/or temperature applications.
In conclusion, the DMP6185SEQ-13 is a power MOSFET based on the field effect transistor technology. It is used in high power applications, such as switching power supplies, motor drives, and lighting systems. The device is well suited for high power dissipation and high-efficiency operation. It is also suitable for use in extremely low power dissipation applications due to its low gate drive voltage and excellent temperature performance. In addition, the device comes with a TO-220 package with clip for attaching to a heatsink, which helps in dissipating the heat generated during high current and/or temperature applications.
The specific data is subject to PDF, and the above content is for reference
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DMP6185SEQ-13 Datasheet/PDF