Allicdata Part #: | DMT3020LFDB-7DITR-ND |
Manufacturer Part#: |
DMT3020LFDB-7 |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N-CHA 30V 7.7A DFN2020 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 7.7A 700mW Sur... |
DataSheet: | DMT3020LFDB-7 Datasheet/PDF |
Quantity: | 21000 |
3000 +: | $ 0.15430 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 7.7A |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 393pF @ 15V |
Power - Max: | 700mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | U-DFN2020-6 (Type B) |
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The DMT3020LFDB-7 is a logic level field effect transistor array available in the TO252-3L package. The device consists of four independent N-channel power MOSFETs in a single package. It is designed for use in automotive high side and low side switch applications such as DC-DC converters and motor control.
The device is a monolithic MOSFET array suitable for a wide range of applications, including motor control and power conversion. It consists of four independent N-channel power MOSFETs, each with an independent logic level gate and reverse-body diode. Each MOSFET has low on-resistance, and low capacitance, making them suitable for a range of DC-DC and AC-DC converters. The device also features ESD protection, over temperature protection, and over voltage protection.
The DMT3020LFDB-7 is designed for use in automotive switch applications such as DC-DC converters and motor control. The low on-resistance of each MOSFET reduces power loss and improves efficiency in motor control applications. The device also features reverse-body diode protection, which helps prevent short circuits by protecting the load in case of transient events. This makes the device ideal for automotive applications where robustness and reliability are essential.
The working principle of the DMT3020LFDB-7 is simple. The device contains four independent N-channel power MOSFETs, each with an independent logic level gate. The gate can be controlled by an external signal, such as a microcontroller or driver IC, which turns the MOSFET on or off. The on-resistance of the MOSFETs is low, so when the device is on, a small voltage is applied to the load, resulting in a low power loss. When the device is off, no current is drawn from the circuit, and power is conserved.
The reverse-body diode protection helps protect the load in the event of a transient event, such as a short circuit or overvoltage. The diode slows the rate of change of the transient event, reducing the risk of component damage. The device also features over temperature protection and ESD protection, making it suitable for automotive applications.
In summary, the DMT3020LFDB-7 is a logic level field effect transistor array that is suitable for a wide range of applications, including motor control and power conversion. It consists of four independent N-channel power MOSFETs, each with an independent logic level gate and reverse-body diode. It is designed for use in automotive switch applications such as DC-DC converters and motor control, and offers enhanced protection against short circuits and other transient events. The low on-resistance of each MOSFET reduces power loss and improves efficiency, making it an ideal choice for any automotive application.
The specific data is subject to PDF, and the above content is for reference
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