Allicdata Part #: | DMT3020LFDF-13-ND |
Manufacturer Part#: |
DMT3020LFDF-13 |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET NCH 30V 8.4A UDFN2020 |
More Detail: | N-Channel 30V 8.4A (Ta) 700mW (Ta), 1.8W (Tc) Surf... |
DataSheet: | DMT3020LFDF-13 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.13204 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | U-DFN2020-6 (Type F) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 700mW (Ta), 1.8W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 393pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.4A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMT3020LFDF-13 is a single N-Channel Enhancement Mode Field Effect Transistor (FET). It is specifically designed for high performance, low power consumption, and low on-resistance. With its low 230mΩ typical on-resistance, it can provide a drain-source on-resistance of only 21µΩ at an over temperature of 175°C.
The DMT3020LFDF-13 is typically used in a variety of applications such as power management in mobile and handheld devices, DC-DC converters, battery chargers, and motor control. It is also used in automotive and industrial applications, including power switching, solenoid control, and power supply circuits. Due to its low on-resistance and high current-handling capability, it is suitable for a wide range of power conversion and current driven applications.
The operating principle of the DMT3020LFDF-13 is based on the field-effect principle. An electric field is created between the gate and the source of the transistor, which is a reverse-biased p-n junction. The electric field induces a current flow from the gate to the source and creates an amplifying effect. The current flow is based on the charge of the gate and the distance between the gate and the source. This allows the drain current to be modulated by changing the magnitude of the applied voltage.
The DMT3020LFDF-13 is designed for optimal performance, efficiency, and reliability. It is designed for operation over a temperature range of - 40°C to +175°C. It features an integrated ESD protection diode to protect the FET from an electrostatic discharge, and a low RDS(on) with excellent thermal characteristics.
The DMT3020LFDF-13 has excellent performance and is an ideal choice for high performance, low power, and low on-resistance applications. It has low on-resistance and high current capabilities that make it suitable for a variety of power conversion and current driven applications. Its integrated ESD protection diode adds additional reliability and ease of use.
The specific data is subject to PDF, and the above content is for reference
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