Allicdata Part #: | DMT3008LFDF-13DI-ND |
Manufacturer Part#: |
DMT3008LFDF-13 |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 12A |
More Detail: | N-Channel 30V 12A (Ta) 800mW (Ta) Surface Mount U-... |
DataSheet: | DMT3008LFDF-13 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.20721 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | U-DFN2020-6 (Type F) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 800mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 886pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMT3008LFDF-13 is a high-performance, low-voltage, low-power MOSFET that meets the demanding requirements of a wide range of applications. It is designed with a small outline package that is suitable for use in portable electronic devices and other tight-space applications, such as in automotive, medical, and communications equipment. This single N-channel MOSFET is suitable for applications that require very low ON resistance, very low gate charge, and low capacitance. It is commonly used in in power management systems, such as those found in graphics cards, notebook PCs, and routers.
The DMT3008LFDF-13 is a MOSFET with a single N-channel design. It is composed of an insulated gate structure that is made up of two N-type silicon layers surrounded by an insulated material. It operates in an enhancement mode, meaning that when the gate voltage is greater than the source voltage, the MOSFET will be turned on, allowing current to flow from the source to the drain. When the gate voltage is lower than the source voltage, the MOSFET will be turned off, blocking current flow from the source to the drain. This enables the DMT3008LFDF-13 to be used to control the flow of current in an electrically isolated circuit. This makes it ideal for use in isolating different parts of a circuit such as input/output stages or high/low voltage circuits.
The DMT3008LFDF-13 has a number of advantages over other transistors and MOSFETs. It has a very low ON resistance, which makes it ideal for use in high current circuits. It also has a very low gate charge, which means that it requires less power to drive than other transistors and MOSFETs. This makes it an ideal choice for power management systems, such as those found in graphics cards, notebook PCs, and routers. Lastly, it has a low capacitance, which means that it is less susceptible to electrical noise. This makes it well suited for high speed applications such as those found in communications and medical equipment.
The DMT3008LFDF-13 is an excellent choice for a wide range of applications due to its high performance, small package, and low power consumption. Its low ON resistance, low gate charge, and low capacitance make it ideal for use in power management systems, whereas its low power consumption and low noise make it well suited for high speed applications in communications and medical equipment. Overall, the DMT3008LFDF-13 is an excellent choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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