DMT3008LFDF-7 Allicdata Electronics
Allicdata Part #:

DMT3008LFDF-7DITR-ND

Manufacturer Part#:

DMT3008LFDF-7

Price: $ 0.26
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 30V 12A
More Detail: N-Channel 30V 12A (Ta) 800mW (Ta) Surface Mount U-...
DataSheet: DMT3008LFDF-7 datasheetDMT3008LFDF-7 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.23112
Stock 1000Can Ship Immediately
$ 0.26
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type F)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 886pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 10 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMT3008LFDF-7 is a Power MOSFET designed for switching applications from Fairchild Semiconductor. This MOSFET is manufactured using their SuperSOT narrow body PowerTrench process, and can handle a maximum voltage of 30v and a maximum current of 8A. It is an N-Channel enhancement mode MOSFET that is used in a wide range of applications. This includes home appliances, office equipment, hard disk drives, temperature control circuits, etc.

The DMT3008LFDF-7 is a single MOSFET, which means it requires only a single device to turn on and off, as opposed to other MOSFETs which require two devices, an N-channel and a P-channel. The DMT3008LFDF-7 is also a low threshold MOSFET which means it operates at lower voltages, allowing more efficient use of power. The device is available in both a TO-251 and a DPAK package for increased flexibility.

The DMT3008LFDF-7 operates using an “Enhancement-Mode” of operation. In this mode, the gate is biased at a voltage greater than 4.5 volts to cause the MOSFET to turn ON. Any voltage less than 4.5 volts will result in the MOSFET turning OFF. This is opposite to a depletion-mode MOSFET, which requires the gate voltage to be less than 4.5 volts to turn ON, and any voltage greater than 4.5 volts will result in the MOSFET turning OFF.

The main application fields of the DMT3008LFDF-7 include power management, such as reset and sleep circuits, current control, switching, such as high and low side switching, and inverters. The device can also be used in controlling appliances and industrial automation and control, such as motor control, or artificial intelligence.

The DMT3008LFDF-7 is designed for various switching applications in automotive, industrial and consumer electronics. The device is capable of handling a maximum voltage of 30v and a maximum current of 8A. The device is available in both a TO-251 and a DPAK package for increased flexibility. The DMT3008LFDF-7 is also a low threshold MOSFET which means it operates at lower voltages, allowing more efficient use of power. Additionally, the device has a low RDS-ON output, allowing for higher energy efficiency.

The DMT3008LFDF-7 has been designed with an Enhanced Ruggedness Technology, which allows it to withstand a greater voltage and current than other standard MOSFETs. Additionally, the device features a fast switching speed which reduces switching losses and allows for more efficient operation. The device also features an extremely low gate charge, thereby enhancing overall power dissipation.

In summary, the DMT3008LFDF-7 is a single MOSFET designed for switching applications from Fairchild Semiconductor. This MOSFET is manufactured using their SuperSOT narrow body PowerTrench process and is available in both a TO-251 and a DPAK package. The device operates using an “Enhancement-Mode” of operation and is capable of handling a maximum voltage of 30v and a maximum current of 8A. The device is designed for various switching applications in automotive, industrial, and consumer electronics. The device features Enhanced Ruggedness Technology, fast switching speed, and an extremely low gate charge.

The specific data is subject to PDF, and the above content is for reference

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