DMT31M6LPS-13 Allicdata Electronics
Allicdata Part #:

DMT31M6LPS-13-ND

Manufacturer Part#:

DMT31M6LPS-13

Price: $ 0.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 30V 35.8A POWERDI506
More Detail: N-Channel 30V 35.8A (Ta) 2.5W (Ta) Surface Mount P...
DataSheet: DMT31M6LPS-13 datasheetDMT31M6LPS-13 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.38036
Stock 1000Can Ship Immediately
$ 0.41
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7019pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 1.35 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35.8A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMT31M6LPS-13 is a single transistor field-effect type (transistors-FETs, MOSFETs-Single), meaning there is one transistor in the circuit. Transistors are used in virtually all electronic systems and devices, and they are referred to by a number of different names, such as field effect transistors (FETs), MOSFETs, and more. The DMT31M6LPS-13 is specifically designed for use in high frequency single and dual gate radio-frequency integrated circuits. It is also used in highly integrated power switching circuits, such as full bridge DC-DC converters or Class AB audio amplifiers.

Primarily, the DMT31M6LPS-13 is used to switch current. It has a breakdown voltage of 10V and an on-state resistance of 0.1 ohms. This transistor is specifically designed for high frequency applications, and its primary benefit is that it can be switched from on to off and vice versa very quickly. This makes it ideal for pulse applications, where the amount of time between switching on and off is extremely short.

The DMT31M6LPS-13 is composed of several components, including a source (S), a drain (D), a gate (G), and a substrate (b). The source and drain are the two terminals in which current flows. Conversely, the gate is the terminal that controls the current flow between the source and the drain. When the gate voltage is such that the current is able to flow between the source and the drain, the transistor is said to be "on". When the gate voltage is such that the current cannot flow, the transistor is said to be "off".

The way the DMT31M6LPS-13 works is fairly simple. When the gate voltage is applied, electrons from the drain side of the transistor are attracted toward the gate and the transistor turns on. Conversely, when the gate voltage is removed, the electrons are no longer attracted toward the gate and the transistor turns off. Therefore, by controlling the gate voltage, the current flow through the transistor can be controlled.

The DMT31M6LPS-13 is most commonly used in high frequency applications. Its fast switching time makes it ideal for pulse applications where the time between switching on and off is extremely short. It is also well-suited for highly integrated power switching circuits, such as full bridge DC-DC converters or Class AB audio amplifiers. Additionally, this transistor can be used in radio-frequency integrated circuits and in frequency multipliers.

The DMT31M6LPS-13 is a fast and efficient transistor, and its high breakdown voltage, low on-state resistance, and fast switching speed make it ideal for high frequency applications. It is specifically designed to be used in radio-frequency integrated circuits, frequency multipliers, and switching power circuits. Additionally, it has a wide range of industrial and commercial applications and is popular among designers due to its ease of use and reliability.

The specific data is subject to PDF, and the above content is for reference

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