DMT3003LFG-13

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-PowerVDFN
Supplier Device Package:	PowerDI3333-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.4W (Ta), 62W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2370pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	44nC @ 10V
Series:	Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:	3.2 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	22A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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DMT3003LFG-13 Application Field and Working Principle

The DMT3003LFG-13 is part of the Discrete MOSFET family from STMicroelectronics. It is a single, high-voltage, low-on-resistance N-channel discrete power MOSFET. The DMT3003LFG-13 is designed for use in high-efficiency, high-current switching and linear applications in low voltage power and in high power, large-current applications.

Features

The N-channel discrete power MOSFETs provided by theDMT3003LFG-13 series offer a range of useful features:• High-voltage tolerance: up to 500V • Low switching losses • Low gate input capacitance • Low gate charge • Low on-resistance• High avalanche energy • Low thermal resistance • Low noise • Lead-free technology

Applications

The features of the DMT3003LFG-13 make it suitable for multiple applications across many sectors, including appliances, home entertainment, industrial and automotive applications:• Automotive (Class D and E)• Home & industrial motor control• Industrial power converters• Power circuits for home appliances• Battery charger• Solar inverters• DC/DC converters• Electric vehicle motor controls• Automotive airbag inflators• UPS industrial systems • High-efficiency converters

Working Principle

The basic principle behind MOSFETs is that they act as a switch between two electrical sources. The switch is "ON" when the voltage of its control system (the gate) is high and "OFF" when the voltage at the gate is low. It is the transistor\'s job to close the circuit, allowing current to flow between the two terminals.The way this works is that the MOSFET has three pins; the source (S) pin, the drain (D) pin, and the gate (G) pin. When the Gate pin is connected to ground a transistor switch is completed, allowing current to flow between the Source and Drain pins. Conversely, when there is no voltage connected to the Gate pin, the transistor is considered "OFF", meaning that no current flows between the Source and Drain pins. ConclusionThe DMT3003LFG-13 is a high-voltage, low-on-resistance N-channel discrete power MOSFET from STMicroelectronics and is suitable for multiple applications across many sectors, including automobiles, home and industrial motor control, industrial power converters, solar inverters, electric vehicle motor controls, and more. Its features, such as its low switching losses, low gate input capacitance, low gate charge, and low on-resistance, contribute to a high power and large-current performance. The working principle behind MOSFETs is that they act as a switch between two electrical sources. When the Gate pin is connected to ground a transistor switch is completed, allowing current to flow between the Source and Drain pins. The DMT3003LFG-13 offers a range of useful features and makes an ideal choice for high-efficiency, high current switching and linear applications in low voltage power and in high power, large-current applications.

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