DMT32M5LFG-7

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The DMT32M5LFG-7 is a power Mosfet device typically used for switch-mode power supplies, motor control, and power converters. It is a high power-density device that provides both high input impedance and low output impedance, allowing for efficient energy transfer between components. It has a high level of channel-to-channel symmetry, which ensures a consistent performance across a wide range of operating conditions. The device is typically found in applications such as welding, medical, industrial processes, and power management systems.

Device Construction

The DMT32M5LFG-7 consists of two power FETs mounted on a leadframe, which provides electrical isolation and heat-sinking. The power FETs are isolated from each other to prevent thermal stress and current leakage. The leadframe is connected to a substrate to form the package. The device has a junction-gate oxide layer, which reduces gate capacitance and improves on-resistance. The gate oxide layer also provides ESD protection.

Device Performance

The DMT32M5LFG-7 has an on-resistance of 32mΩ and a breakdown voltage of 1700V. It has a maximum drain-source voltage of 175V. The device has a low gate charge of 8nC, and a low gate-drain junction capacitance of 9pF. It also has a low current leakage, with a maximum on-state current of 5A. The device offers a fast switching response, with a turn-on delay time of 7ns, and a turn-off delay time of 15ns. The device can act as a high-speed switch for AC-DC, DC-DC, and AC-AC converters. The true differential output voltage can be used for synchronous rectification, and for low-EMI switched-mode applications.

Applications

The DMT32M5LFG-7 is suitable for a wide range of applications, from industrial motor control and robotics to home appliances, power supplies, and lighting. Its high level of channel-to-channel symmetry makes it ideal for controlling loads that require bidirectional control. Its low on-resistance and high breakdown voltage make it suitable for switching high-power loads, such as electric cars and tractors. Its low gate charge and low gate-drain junction capacitance make it suitable for very fast switching applications. Its high level of ESD protection makes it appropriate for applications where ESD issues may be a problem.

Working Principle

The DMT32M5LFG-7 operates on a basic transistor principle called “Depletion-mode MOSFETs”. It is usually used for power applications such as switches, amplifiers, and other applications that require a high input impedance with a low output impedance. This type of transistor differs from other types of transistors due to its ability to operate in either enhancement mode or depletion mode. When operated in enhancement mode, the device operates as a small-signal switch with very low voltages applied to the gate terminal. When operated in depletion mode, the device instead functions as a current regulator, by allowing current to flow when a certain voltage threshold is exceeded.

In a typical application, the depletion-mode MOSFET acts as a switch, controlling the flow of current to a load. When the gate is driven HIGH, the MOSFET allows current to flow from the drain to the source, effectively turning the switch ON. When the gate is driven LOW, the device blocks the flow of current, effectively turning the switch OFF. The DMT32M5LFG-7 is designed to operate in various operating modes including on-off and pulse-width-modulated (PWM) control.

The beauty of the depletion-mode MOSFET lies in its ability to be used in simple control and switching applications. The device has a high input impedance and low output impedance, which allows for efficient current switching, while maintaining minimal power loss. The high breakdown voltage ensures that the device is reliable and stable over long-term use, making it the ideal choice for long-term, high-power applications.

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