
Allicdata Part #: | DMT3006LFG-7DITR-ND |
Manufacturer Part#: |
DMT3006LFG-7 |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CHA 30V 16A POWERDI |
More Detail: | N-Channel 30V 16A (Ta), 55.6A (Tc) 27.8W (Tc) Surf... |
DataSheet: | ![]() |
Quantity: | 1000 |
2000 +: | $ 0.20990 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerDI3333-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 27.8W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1320pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22.6nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Ta), 55.6A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMT3006LFG-7 is a single MOSFET (metal-oxide-semiconductor field-effect transistor) device used for a variety of electronic applications. It is a high-voltage MOSFET with a high voltage breakdown capability and low on-state drain-source resistance. The DMT3006LFG-7 is most commonly used in switch-mode power supply (SMPS) and DC/DC applications. It is also used in many other applications such as battery management, motor control, and high-speed switching.
The DMT3006LFG-7 is optimized for low gate charge (QG), low gate-source voltage (VGS) operation, and high peak drain current (ID). It is a surface-mount device that comes in a tiny 8-pin package. The device has an isolated current-limiting resistor, which helps to protect the device from overcurrent and short circuit conditions.
The DMT3006LFG-7 has an operating temperature range of -40°C to 150°C and is ideal for applications where small size, low voltage and power handling are required. The device offers superior performance for high-frequency switching applications, providing low audible noise and high efficiency.
The basic principle of operation of the DMT3006LFG-7 is based on the transfer of electrons from the source electrode to the drain electrode. The gate electrode is used to control the flow of electrons by controlling the voltage applied across it. When a positive voltage is applied to the gate, it attracts electrons and creates a dynamic inversion region between the source and drain. The electrons are then allowed to flow from the source to the drain. This is how the DMT3006LFG-7 performs its switch-like function; it either turns on the current flow or off depending on the gate voltage applied.
The DMT3006LFG-7 is capable of handling a maximum drain-source voltage of 60 V and a maximum drain current of 30 A. It has a maximum gate-source voltage of 13 V and a gate-source capacitance of around 100 pF. The device has an on-resistance of 1.66 Ohms and an off-state leakage current of -100 µA (maximum). It also has excellent switching characteristics with a fall time of 4.5 nS and an on-time of 0.9 ms.
The excellent performance characteristics and wide operating temperature range of the DMT3006LFG-7 make it an ideal choice for a variety of applications. It is suitable for use in SMPS and DC/DC converters, motor control, battery management, and high speed switching. The insulation resistance and creepage distance of the device also make it suitable for use in high voltage applications. With its high performance features, the DMT3006LFG-7 is an excellent device for any application that requires a reliable MOSFET switch.
The specific data is subject to PDF, and the above content is for reference
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