DMT32M5LPS-13

Vgs(th) (Max) @ Id:	3V @ 1mA
Package / Case:	8-PowerTDFN
Supplier Device Package:	PowerDI5060-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	100W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3944pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	68nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	2 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	150A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IntroductionThe DMT32M5LPS-13 is a high-performance field-effect transistor. This transistor is an advanced device with an extremely small form factor and an ultra-low power consumption. It is designed primarily to be used in telecommunications and industrial applications where high-speed operation, high speed switching and low power consumption are all of great importance.Application FieldThe DMT32M5LPS-13 transistor has a variety of applications in the field of telecommunication equipment, computers and industrial equipments. This device can be used in ultra-fast switching applications such as cross-point switching in optical networks, linear and stepping motors, high-speed data transmission, RF power amplifiers, high-frequency amplifiers and digital logic gates. Furthermore, its small form factor makes it suitable for compact base station designs, as well as for use in small modems and other devices with space constraints. It is also highly suitable for high-speed switching in high-speed optical networks due to its low power consumption and low size. Additionally, it can also be used in automotive applications.Function and Working PrinciplesThe DMT32M5LPS-13 is a N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a depletion-mode device used in high-speed switching applications. This device is designed based on the principle of source-drain current flow. The source and drain are two terminals through which current flow starts and ends, respectively. The Gate terminal acts as a switch which can control the flow of current between the source and the drain. When voltage is applied to the Gate terminal, an electric field is created which pulls electrons from the drain towards the source. This reduces the resistance between the source and the drain and hence increases the current flow. When the voltage at the Gate terminal is removed, the current flow between the source and the drain is diminished.This device is also equipped with a number of special features that can improve its performance in high-speed switching applications. The parasitic capacitance between the source and the Gate terminal, which occurs in traditional MOSFETs, can be reduced by using an advanced insulation layer between the terminals. This feature allows for high switching speed and reduces the power consumption during operation. The device also features an integrated Body Diode which can reduce the delay during switching operations. Furthermore, a number of layout options are also available to further improve the performance of the device in high-speed switching applications.ConclusionThe DMT32M5LPS-13 is an advanced field-effect transistor which is designed for use in a wide range of high-speed switching applications. Its small form factor, ultra-low power consumption and advanced performance enhancing features make it suitable for use in a variety of telecommunication equipment, computers and industrial equipments. It is also suitable for use in automotive applications.

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