DTA024EEBTL Discrete Semiconductor Products |
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Allicdata Part #: | DTA024EEBTLTR-ND |
Manufacturer Part#: |
DTA024EEBTL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 50V 0.15W SC89 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA024EEBTL Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 30mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | EMT3F (SOT-416FL) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DTA024EEBTL single pre-biased bipolar transistor is a type of BJT (Bipolar Junction Transistor) which is used as a drive component in high-frequency applications. It is suitable for use in DC/DC converter, boost converter and other switch-mode power supplies. The device consists of a PNP and a NPN transistor connected in series. This configuration is referred to as pre-biasing, as the base-emitter junction of the PNP transistor is reverse polarized in comparison to the NPN. This allows for greater efficiency and faster switching speeds.
The DTA024EEBTL can be used either in the s-configuration or in the switch-mode configuration. In the s-configuration, the collector of the PNP transistor is connected to the drain of the NPN transistor and both transistors are driven simultaneously. In switch-mode configuration, the collector of the PNP transistor is disconnected and the NPN transistor is driven separately. This configuration allows for faster switching times and higher-frequency operation compared to the s-configuration.
The DTA024EEBTL has a maximum current rating of 200mA and a peak off-state voltage rating of 600V. It is also capable of switching frequencies up to 16MHz. The device has an on-state voltage drop of 2V, which is relatively low compared to other BJT types. The device is rated for a maximum junction temperature of 175°C and an operating junction temperature range of -40°C to 125°C.
The working principle of the DTA024EEBTL is based on BJT biasing. The two transistors are connected in series and the base-emitter junction of the PNP transistor is reverse polarized in comparison to the NPN. When sufficient current is applied to the base of the NPN transistor, it conducts and the PNP transistor is forward biased, allowing current to flow.
When the device is used in the switch-mode configuration, the PNP transistor is disconnected and the NPN transistor is driven separately. When the transistor is off, no current flows and the off-state voltage is maintained. When the transistor is on, current flows from the PNP transistor, through the NPN transistor, and back to the PNP, allowing higher frequency operation.
The DTA024EEBTL is a versatile device, capable of use in a variety of switching applications. Its pre-biasing configuration allows for higher efficiency, faster switching times, and lower on-state power dissipation. Its rated current and voltage ratings provide for increased reliability and safer operation.
The specific data is subject to PDF, and the above content is for reference
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