Allicdata Part #: | DTA043ZMT2L-ND |
Manufacturer Part#: |
DTA043ZMT2L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 150MW VMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA043ZMT2L Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | VMT3 |
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The DTA043ZMT2L is a one-of-a-kind device from Toshiba products line. It is classified as a pre-biased single bipolar junction transistor (BJT). BJTs are commonly used in electronics applications where bipolar amplification is needed. BJTs offer several advantages over other types of transistors, like a higher current gain, greater voltage gain and better noise suppression. The DTA043ZMT2L is a pre-biased device, meaning it has been specifically designed to be used with a predetermined bias. This feature makes it ideal for many applications where a specific voltage or current bias is required.
The DTA043ZMT2L is used in a variety of digital and analog applications. In digital applications, the device is used as an amplifier for signals picked up from digital logic circuits. It can also be used in amplifying and converting serial data signals, in order to process and transmit digital data over the communication networks. In analog applications, the device is used to amplify and convert electrical signals in a variety of industries and applications, such as automotive, industrial, and scientific.
The working principle of the device is based on the bipolar junction transistor architecture. This type of transistor consists of two semiconductor layers or bases which are connected with a base terminal. When a small current is passed through the base terminal, it changes the output voltage of the device. This output voltage can then be used to amplify and convert electrical signals. This amplified signal can then be used to drive higher current outputs.
The DTA043ZMT2L is a reliable and robust device, with low power consumption, and a high operating temperature range. It is also highly sensitive and responsive to signals due to its fast switching speeds. In addition, it offers adjustable current gain, bias voltage, and gain-bandwidth product. This makes it suitable for many different applications.
The DTA043ZMT2L is a highly specialized device, and its applications and working principle should be understood before using it in any application. Its versatile design and capabilities make it suitable for many applications, and Toshiba’s commitment to quality ensures that it will provide a reliable and durable performance.
The specific data is subject to PDF, and the above content is for reference
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