Allicdata Part #: | DTB113ECT116TR-ND |
Manufacturer Part#: |
DTB113ECT116 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | PNP -500MA/-50V DIGITAL TRANSIST |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTB113ECT116 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
3000 +: | $ 0.03454 |
6000 +: | $ 0.03003 |
15000 +: | $ 0.02553 |
30000 +: | $ 0.02403 |
75000 +: | $ 0.02252 |
150000 +: | $ 0.02002 |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 200MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SST3 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 1 kOhms |
Resistor - Emitter Base (R2): | 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 33 @ 50mA, 5V |
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The DTB113ECT116 is a pre-biased single bipolar junction transistor, otherwise known as a BJT. BJTs employ the physics of two back-to-back p-n junctions, which are responsible for the transistor\'s basic amplifying and switching behavior.A pre-biased BJT provides more options for the application in which it is used, given the improved electrical characteristics when compared to an unbiased transistor. This improved performance makes the device well-suited to a number of application fields, such as linear circuit and audio control applications.In general, BJTs are used as switches or amplifiers, and can be found in a variety of circuits. The most common uses of the DTB113ECT116 include voltage regulation, power control, and amplification. It can also be used as a general-purpose switch for switching low-voltage devices.The way a pre-biased BJT works is quite simple. As current is applied to the base terminal of the transistor, a small amount of current flows through the collector-base pathways. This small current causes the collector and emitter potentials to be polarised, which causes current to flow from the base to the emitter. This current is then amplified and can be used to control the voltage across a load.The DTB113ECT116 can also be used as an amplifier. In this application, the transistor\'s collector-base pathways act as the input, while the emitter portion of the transistor acts as the output. The base-emitter pair act as the input, where the current passes through the base-emitter junction and is then amplified. The amplified signal is then passed onto the load, allowing the transistor to control the current.When used in circuits, the DTB113ECT116 is designed to provide both high input and output impedance. This allows for high gain, a wide dynamic range, and high frequency response for a variety of applications. The generous power dissipation of the device also makes it suitable for a range of uses, including audio control, power amplifiers and low-voltage switching applications.Overall, the DTB113ECT116 is a versatile pre-biased BJT with a wide range of applications. It offers improved performance over an unbiased transistor, while providing both high gain and low power dissipation. This makes the device ideal for a number of applications, including linear circuit and audio control.
The specific data is subject to PDF, and the above content is for reference
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