DTB113ZCT116

Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	1 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	200MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SST3

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Introduction

The DTB113ZCT116 is a single pre-biased, bipolar junction transistor (BJT). It belongs to a family of transistors famously known as the "Platinum Family". These transistors are designed and manufactured by Toshiba Semiconductor Corporation. The transistors are most commonly used in a variety of applications because of their excellent characteristics, including low voltage (1.8V), low current (12mA) and low power dissipation (0.3W).

Application Fields

The DTB113ZCT116 can be used in a variety of applications, including motor control, data acquisition, power supply systems, low voltage and current amplifier, telecommunications, switch control, temperature control, noise and vibration detection, and wireless communications.The DTB113ZCT116 is primarily used as a high-speed switching device in many applications. It can also be used in applications to provide isolation or circuit protection. The device can also provide output signals for logic gate operation. It is ideal for low power and low voltage applications such as in low voltage logic circuits.

Working Principles

The DTB113ZCT116 is a single pre-biased BJT with an integrated gold net that ensures its high switching speed. It is a three terminal device with two main parts, the collector and the emitter. The collector is connected to the power supply and the emitter is connected to the ground. The base is the third terminal and is used as the control terminal of the device.When the base voltage changes, the amount of current flowing between the collector and the emitter changes as well. This phenomenon is called the transistor effect, which is the basis of BJT operation. When the base voltage increases beyond the Cut-Off Voltage, the transistor switches on and the current flows through the collector-emitter circuit. The amount of current depends on the magnitude of the voltage and the resistance of the circuit.The DTB113ZCT116 is referred to as “pre-biased” because part of the voltage is already present at the base, and no additional voltage is required for cutting it on. This ensures that it is switched off immediately when the base current drops. This feature makes it ideal for high speed switching applications.

Conclusion

The DTB113ZCT116 is an excellent choice for applications where a fast switching speed is desirable. Its integrated gold net ensures that it can operate in low voltage and current conditions, which makes it suitable for applications such as low voltage logic circuits and data acquisition systems. Its pre-biased feature means that it can be switched on and off without needing an additional voltage source. This makes it ideal for many applications where high switching speeds are needed.

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