DTB113ZCHZGT116

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP - Pre-Biased + Diode
Current - Collector (Ic) (Max):	500mA
Resistor - Base (R1):	1 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):	--
Frequency - Transition:	200MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SST3

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Introduction

The DTB113ZCHZGT116, also known as a single pre-biased bipolar junction transistor, is a widely used type of transistor in the electronics and telecommunications industries. In this article, we will be discussing the application fields and the working principle of the DTB113ZCHZGT116.

Application Fields

The DTB113ZCHZGT116 is most commonly incorporated into microelectronic circuits as amplifiers, switches, or bi-directional current devices. As a pre-biased device, it has both an inherent bias voltage and a maximum collector current that are static across a wide range of operating conditions. The DTB113ZCHZGT116 is often used in circuits with limited power supplies, as it requires only a single power source. It is also capable of reliably switching frequencies of up to 100 megahertz, making it ideal for use with digital logic systems and/or microprocessors. Because of its high speed response, the DTB113ZCHZGT116 is often used in radio frequency (RF) applications. Its pre-biased state further enables the device to operate reliably in RF transmitters and receivers. In addition, thanks to its low power consumption, the DTB113ZCHZGT116 is a suitable component for low-power device applications, such as wireless sensors and remote monitoring systems, portable electronics, and mobile devices.

Working Principle

The DTB113ZCHZGT116 works on the same basic principle as other bipolar transistors. It has three terminals: the base, the collector, and the emitter. When a voltage is applied to the base, it creates a current flow between the collector and the emitter. The current flow is limited and controlled by the base voltage, which is referred to as the biasing voltage. This voltage can be increased or decreased to control the current flow between the emitter and the collector.When the biasing voltage is set to a certain value, the device is said to be pre-biased. This essentially means that the transistor is in a static state and can operate reliably with minimal changes in the biasing voltage. As current flows through the transistor, it is amplified by the device. This is a process which results in an increase in the collector-emitter current, and is a property of virtually all transistors.

Conclusion

In conclusion, the DTB113ZCHZGT116 is a single pre-biased bipolar junction transistor that is commonly used in various electronic and telecommunications applications. Its pre-biased state allows it to operate reliably in circuits with limited power supplies, and it is suitable for use in RF applications and low-power electronic devices. Its working principle is the same as any other bipolar transistor, wherein a current is created between the collector and the emitter when a voltage is applied to the base. This current is then amplified by the device.

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