DTB143ECT216

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DTB143ECT216 is a pre-biased, single, bipolar junction transistor (BJT). It is primarily used in high reliability and/or high temperature applications. It is designed with a high-voltage, collector-emitter operating voltage of up to 225 V. It also offers a high temperature operating range of up to 260 °C ambient.

As a pre-biased BJT, the DTB143ECT216 is commonly used as a voltage reference in circuits that require high accuracy and stability. The pre-biased feature of the device enables it to maintain its voltage output over a wide range of temperature, current and other environmental conditions. This ensures that the voltage output of the device remains consistently accurate over time.

The working principle of the BJT is based on the movement of two types of charge carriers, electrons and holes. As current is applied, the electrons move from the emitter to the collector while the holes move from the collector to the emitter. The movement of these charges results in voltage gain, which is determined by the ratio of the collector current to the emitter current.

The DTB143ECT216 also features an emitter-base breakdown voltage of 7 V, a collector-emitter saturation voltage of 0.25 V at a collector current of 150 mA, and an allowed collector current of up to 500 mA. The device\'s maximum power dissipation is 1.8 W. Its on-state capacitance is also relatively low, ranging from 0.006 pF to 0.035 pF. It is also capable of withstanding transient voltages up to 400 V.

In addition to voltage referencing, the DTB143ECT216 can be used in a variety of other applications, such as DC-DC converters, switch mode power supplies, voltage regulators, and other power management applications. Its excellent temperature resilience, stability and precision make it an ideal choice for any circuit that requires robust and long-term performance.

In summary, the DTB143ECT216 is a pre-biased, single, bipolar junction transistor (BJT) designed for high temperature and reliability applications. It offers excellent temperature resilience, stability, and accuracy in its voltage output. Its maximum collector current rating and low on-state capacitance make it suitable for a variety of power management applications, such as DC-DC converters, switch mode power supplies, and voltage regulators.

The specific data is subject to PDF, and the above content is for reference