DTB114ECHZGT116 Discrete Semiconductor Products |
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Allicdata Part #: | DTB114ECHZGT116TR-ND |
Manufacturer Part#: |
DTB114ECHZGT116 |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | PNP -500MA -50V DIGITAL TRANSIST |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTB114ECHZGT116 Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.02739 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased + Diode |
Current - Collector (Ic) (Max): | 500mA |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 200MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SST3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DTB114ECHZGT116 is a high-performance single bipolar pre-biased transistor manufactured by Diodes Inc., widely used for applications in many fields. It is an NPN silicon transistor that is widely used as an amplifier or a switch in cellular applications. It operates at a relatively low current, consuming only 2 mA, making it a perfect choice for many mobile applications.
The circuit diagrams provided by the manufacturer indicate that this transistor can be used in various ways. Some common usages are as a diode in rectifier circuits, as an amplifier when used with bipolar current mirrors, or as a switch in digital logic circuits. The transistor is also used in power management applications and power supply design.
The DTB114ECHZGT116 features a junction-gate- source flange which provides excellent thermal stability. The maximum breakdown voltage attained by the transistor is greater than 9 V, and the thermal resistance under load is less than 0.2°C/W. The manufacturer also says that the device is capable of surviving over temperature difference up to 8 %.
The DTB114ECHZGT116 is one of the most widely used pre-biased transistors due to its high-performance, low cost and reliable output characteristics. The advantages of using the device include high-speed switching, low drive current, wide-band gain and a good linearity at all current levels. Another notable feature of the DTB114ECHZGT116 is its wide overload protection range.
In order to understand how the DTB114ECHZGT116 operates, it is important to understand what defines pre-biased. The pre-biased in this context refers to a bias voltage applied to the gate terminal of the transistor. This bias voltage ensures that the transistor is already in the active region, ready to switch and amplify the input signal. The device can also be used as an open-collector switch when no voltage is applied to the gate terminal.
The working principle of the DTB114ECHZGT116 is fairly straightforward. It starts with the application of a bias voltage to the gate terminal, followed by the application of an input signal. Depending on the type of signal, the transistor will then act as an amplifier or switch. The bias voltage controls the current flowing through the transistor, which is set by the external circuit.
All of these functions make the DTB114ECHZGT116 an ideal choice for many applications. The device is suitable for use in low-power analog circuits, power amplifiers and power management systems. It is also a great choice for designers as it is highly reliable and performs well in a wide range of operating conditions. Its high-speed switching ability makes it perfect for digital circuits as well.
The specific data is subject to PDF, and the above content is for reference
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